Refine
Year of publication
- 2014 (1)
Document Type
Language
- English (1)
Has full text
- no (1)
Is part of the Bibliography
- yes (1)
Institute
- Technik (1)
Publisher
- VDE-Verlag (1) (remove)
IGBT modules with anti-parallel FWDs are widely used in inductive load switching power applications, such as motor drive applications. Nowadays there is a continuous effort to increase the efficiency of such systems by decreasing their switching losses. This paper addresses the problems arising in the turn-on process of an IGBT working in hard-switching conditions. A method is proposed which achieves – contrary to most other approaches – a high switching speed and, at the same time, a low peak reverse-recovery current. This is done by applying an improved gate current waveform that is briefly lowered during the turn-on process. The proposed method achieves low switching losses. Its effectiveness is demonstrated by experimental results with IGBT modules for 600V and 1200V.