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We present a compact battery charger topology for weight and cost sensitive applications with an average output current of 9A targeted for 36V batteries commonly found in electric bicycles. Instead of using a conventional boost converter with large DC-link capacitors, we accomplish PFC-functionality by shaping the charging current into a sin²-shape. In addition, a novel control scheme without input-current sensing is introduced. A-priori knowledge is used to implement a feed-forward control in combination with a closed-loop output current control to maintain the target current. The use of a full-bridge/half bridge LLC converter enables operation in a wide input-voltage range.
A fully featured prototype has been built with a peak output power of 1050W. An average output power of 400W was measured, resulting in a power density of 1.8 kW/dm³. At 9A charging current, a power factor of 0.96 was measured and the efficiency exceeds 93% on average with passive rectification.
The impact of pulse charging has been evaluated on a 400Wh battery which was charged with the proposed converter as well as CC-CV-charging for reference. Both charging schemes show similar battery surface temperatures.
The Dual Active Bridge (DAB) is a very promising topology for future power converters. However, careless operation can lead to a DC component in the transformer current. The problem is further exacerbated when the phase shift changes during operation. This work presents a study of DC bias effects on the DAB with special regard to transient effects introduced by sudden shifts in the output load. We present a simple yet effective approach to avoid DC bias entirely.
A novel brushless excitation concept for synchronous machines with a rotating power converter is proposed in this paper. The concept does not need an auxiliary winding or any other modification to the machine structure apart from an inverter with a DC link capacitor and a controller on the rotor. The power required for the rotor excitation is provided by injecting harmonics into the stator winding. Thus, a voltage in the field coil is induced. The rotor inverter is controlled such that the alternating current charges the DC link capacitor. At the same time the inverter supplies the DC field current to the field coil. The excitation concept is first developed in theory, then presented using an analytical model and FEA, and lastly investigated with a prelimininary experimental setup.
In this work design rules for a novel brushless excitation system for externally excited synchronous machines are discussed. The concept replaces slip rings with a fullbridge active rectifier and a controller mounted on the rotor. An AC signal induced from the stator is used to charge the rotor DC link. The DC current for the rotor excitation is provided from this DC link source. Finite element analysis of an existing machine is used to analyze the practicability of the excitation system.
Improved inductive feed-forward for fast turn-on of power semiconductors during hard switching
(2019)
A transformer is used to increase the gate voltage during turn-on, thus reducing the necessary bias voltage of the gate driver. Counteracting the voltage dependency of the gate capacitance of high-voltage power devices, faster transitions are possible. The additional transformer only slighly increases the over-voltage during turn-off.
Novel design for a coreless printed circuit board transformer realizing high bandwidth and coupling
(2019)
Rogowski coils offer galvanic isolation and can measure alternating currents with a high bandwidth. Coreless printed circuit board (PCB) transformers have been used as an alternative to limit the additional stray inductance if a Rogowski coil can not be attached to the circuit. A new PCB transformer layout is proposed to reduce cost, decrease additional stray inductance, increase the bandwidth of current measurements and simplify the integration into existing designs.
DMOS transistors often suffer from substantial self-heating during high power dissipation, which can lead to thermal destruction if the device temperature reaches excessive values. A successfully demonstrated method to reduce the peak temperature is the redistribution of power dissipation density from the hotter to the cooler device areas by careful layout modification. However, this is very tedious and time-consuming if complex-shaped devices as often found in industrial applications are considered.
This paper presents an approach for fully automatic layout optimization which requires only a few hours processing time. The approach is applied to complex shaped test structures which are investigated by measurements and electro-thermal simulations. Results show a significantly lower peak temperature and an energy capability gain of 84 %, offering potential for a 18 % size reduction of active area.
This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500°C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.
A TLP system with a very low characteristic impedance of 1.5 Ω and a selectable pulse length from 0.5 to 6 μs is presented. It covers the entire operation region of many power semiconductors up to 700 V and 400 A. Ist applicability is demonstrated by determining the Output characteristics for two Cool MOS devices up to destruction.
The experimental characterization of the thermal impedance Zth of large power MOSFETs is commonly done by measuring the junction temperature Tj in the cooling phase after the device has been heated, preferably to a high junction temperature for increased accuracy. However, turning off a large heating current (as required by modern MOSFETs with low on-state resistances) takes some time because of parasitic inductances in the measurement system. Thus, most setups do not allow the characterization of the junction temperature in the time range below several tens of μs.
In this paper, an optimized measurement setup is presented which allows accurate Tj characterization already 3 μs after turn-off of heating. With this, it becomes possible to experimentally investigate the influence of thermal capacitances close to the active region of the device. Measurement results will be presented for advanced power MOSFETs with very large heating currents up to 220 A. Three bonding variants are investigated and the observed differences will be explained.