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This work investigates the electro-thermal behavior and failure mechanism of a 600V depletion-mode GaN HEMT by experimental analysis and numerical thermal simulations. For this device, the positive temperature coefficient of the draingate leakage current can lead to the formation of hot spots. This localized thermal runaway which ultimately results in a breakdown of the inherent drain-gate junction is found to be the dominant cause of failure.
In this work we investigate the behavior of MIS- and Schottky-gate AlGaN/GaN HEMTs under high-power pulsestress. A special setup capable of applying pulses of constant power is used to evaluate the electro-thermal response in different operating points. For both types of devices, the time to failure was found to decrease with increasing drain-source voltage. Overall, the Schottky-gate device displays a higher pulse robustness. The pulse withstand time of the MIS-gate device is limited by the occurrence of a thermal instability at approximately 240°C while the Schottky-gate device displays a rapid increase of the gate leakage current prior to failure. The mechanism responsible for this gate current is further investigated by static and transient temperature measurements and yielded activation energies of 0.6 eV and 0.84 eV.
This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500°C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.
In many automotive applications, repetitive selfheating is the most critical operation condition for LDMOS transistors in smart power ICs. This is attributed to thermomechanical stress in the on-chip metallization, which results from the different thermal expansion coefficients of the metal and the intermetal dielectric. After many cycles, the accumulated strain in the metallization can lead to short circuits, thus limiting the lifetime. Increasing the LDMOS size can help to lower peak temperatures and therefore to reduce the stress. The downside of this is a higher cost. Hence, it has been suggested to use resilient systems that monitor the LDMOS metallization and lower the stress once a certain level of degradation is reached. Then, lifetime requirements can be fulfilled without oversizing LDMOS transistors, even though a certain performance loss has to be accepted. For such systems, suitable sensors for metal degradation are required. This work proposes a floating metal line embedded in the LDMOS metallization. The suitability of this approach has been investigated experimentally by test structures and shown to be a promising candidate. The obtained results will be explained by means of numerical thermo-mechanical simulations.
DMOS transistors in integrated smart power technologies are often subject to cyclic power dissipation with substantial selfheating. This leads to repetitive thermo mechanical stress, causing fatigue of the on-chip metallization and limiting the lifetime. Hence, most designs use large devices for lower peak temperatures and thus reduced stress to avoid premature failures.
However, significantly smaller DMOS transistors are acceptable if the system reverts to a safer operating condition with lower stress when a failure is expected to occur in the near future. Hence, suitable early-warning sensors are required. This paper proposes a floating metal meander embedded between DMOS source and drain to detect an impending metallization failure. Measurement results of several variants will be presented and discussed, investigating their suitability as early warning indicators.
LDMOS transistors in integrated power technologies are often subject to thermo-mechanical stress, which degrades the on-chip metallization and eventually leads to a short. This paper investigates small sense lines embedded in the LDMOS metallization. It will be shown that their resistance depends strongly on the stress cycle number. Thus, they can be used as aging sensors and predict impending failures. Different test structures have been investigated to identify promising layout configurations. Such sensors are key components for resilient systems that adaptively reduce stress to allow aggressive LDMOS scaling without increasing the risk of failure.
On-chip metallization, especially in modern integrated BCD technologies, is often subject to high current densities and pronounced temperature cycles due to heat dissipation from power switches like LDMOS transistors. This paper continues the work on a sensor concept where small sense lines are embedded in the metallization layers above the active area of a switching LDMOS transistor. The sensors show a significant resistance change that correlates with the number of power cycles. Furthermore, influences of sense line layer, geometry and the dissipated energy are shown. In this paper, the focus lies on a more detailed analysis of the observed change in sense line resistance.
In this work, a brushless, harmonic-excited wound-rotor synchronous machine is investigated which utilizes special stator and rotor windings. The windings magnetically decouple the fundamental torque-producing field from the harmonic field required for the inductive power transfer to the field coil. In contrast to conventional harmonic-excited synchronous machines, the whole winding is utilized for both torque production and harmonic excitation such that no additional copper for auxiliary windings is needed. Different rotor topologies using rotating power electronic components are investigated and their efficiencies have been compared based on Finite-Element calculation and circuit analysis.
A novel brushless excitation concept for synchronous machines with a rotating power converter is proposed in this paper. The concept does not need an auxiliary winding or any other modification to the machine structure apart from an inverter with a DC link capacitor and a controller on the rotor. The power required for the rotor excitation is provided by injecting harmonics into the stator winding. Thus, a voltage in the field coil is induced. The rotor inverter is controlled such that the alternating current charges the DC link capacitor. At the same time the inverter supplies the DC field current to the field coil. The excitation concept is first developed in theory, then presented using an analytical model and FEA, and lastly investigated with a prelimininary experimental setup.