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Due to the lack of sophisticated component libraries for microelectromechanical systems (MEMS), highly optimized MEMS sensors are currently designed using a polygon driven design flow. The advantage of this design flow is its accurate mechanical simulation, but it lacks a method for an efficient and accurate electrostatic analysis of parasitic effects of MEMS. In order to close this gap in the polygon-driven design flow, we present a customized electrostatic analysis flow for such MEMS devices. Our flow features a 2.5D fabrication-process simulation, which simulates the three typical MEMS fabrication steps (namely deposition of materials including topography, deep reactive-ion etching, and the release etch by vapor-phase etching) very fast and on an acceptable abstraction level. Our new 2.5D fabrication-process simulation can be combined with commercial field-solvers such as they are commonly used in the design of integrated circuits. The new process simulation enables a faster but nevertheless satisfactory analysis of the electrostatic parasitic effects, and hence simplifies the electrical optimization of MEMS.
Nowadays, the demand for a MEMS development/design kit (MDK) is even more in focus than ever before. In order to achieve a high quality and cost effectiveness in the development process for automotive and consumer applications, an advanced design flow for the MEMS (micro electro mechanical systems) element is urgently required. In this paper, such a development methodology and flow for parasitic extraction of active semiconductor devices is presented. The methodology considers geometrical extraction and links the electrically active pn junctions to SPICE standard library models and subsequently extracts the netlist. An example for a typical pressure sensor is presented and discussed. Finally, the results of the parasitic extraction are compared with fabricated devices in terms of accuracy and capability.