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Die Erfindung betrifft eine Vorrichtung (100) und ein Verfahren zum elektrischen Verbinden und Trennen zweier elektrischer Potentiale (1, 2). Des Weiteren betrifft die Erfindung eine Verwendung der Vorrichtung (100). Dabei umfasst die Vorrichtung (100): – ein erstes Modul, welches einen ersten und einen zweiten Transistor (10a, 10b) umfasst, wobei der erste Transistor (10a) antiseriell zu dem zweiten Transistor (10b) geschaltet ist; und – ein zweites Modul, welches einen dritten und einen vierten Transistor (10c, 10d) umfasst, wobei der dritte Transistor (10c) antiseriell zu dem vierten Transistor (10d) geschaltet ist; wobei das erste Modul und das zweite Modul parallel geschaltet sind.
In recent years, significant progress was made on switched-capacitor DCDC converters as they enable fully integrated on chip power management. New converter topologies overcame the fixed input-to-output voltage limitation and achieved high efficiency at high power densities. SC converters are attractive to not only mobile handheld devices with small input and output voltages, but also for power conversion in IoTs, industrial and automotive applications, etc. Such applications need to be capable of handling high input voltages of more than 10V. This talk highlights the challenges of the required supporting circuits and high voltage techniques, which arise for high Vin SC converters. It includes level shifters, charge pumps and back-to-back switches. High Vin conversion is demonstrated in a 4:1 SC DCDC converter with an input voltage as high as 17V with a peak efficiency of 45 %, and a buckboost SC converter with an input voltage range starting from 2 up to 13V, which utilizes a total of 17 ratios and achieves a peak efficiency of 81.5 %. Furthermore a highly integrated micro power supply approach is introduced, which is connected directly to the 120/230 Vrms mains, with an output power of 3mW, resulting in a power density >390μW/mm², which exceeds prior art by a factor of 11.