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Size and cost of a switched mode power supply can be reduced by increasing the switching frequency. This leads especially at a high input voltage to a decreasing efficiency caused by switching losses. Conventional calculations are not suitable to predict the efficiency as parasitic capacitances have a significant loss contribution. This paper presents an analytical efficiency model which considers parasitic capacitances separately and calculates the power loss contribution of each capacitance to any resistive element. The proposed model is utilized for efficiency optimization of converters with switching frequencies >10MHz and input voltages up to 40V. For experimental evaluation a DCDC converter was manufactured in a 180 nm HV BiCMOS technology. The model matches a transistor level simulation and measurement results with an accuracy better than 3.5 %. The accuracy of the parasitic capacitances of the high voltage transistor determines the overall accuracy of the efficiency model. Experimental capacitor measurements can be fed into the model. Based on the model, different architectures have been studied.
For area reasons, NMOS transistors are preferred over PMOS for the pull-up path in gate drivers. Bootstrapping has to ensure sufficient NMOS gate overdrive. Especially in high-current gate drivers with large transistors, the bootstrap capacitor is too large for integration. This paper proposes three options of fully integrated bootstrap circuits. The key idea is that the main bootstrap capacitor is supported by a second bootstrap capacitor, which is charged to a higher voltage and ensures high charge allocation when the driver turns on. A capacitor sizing guideline and the overall driver implementation including a suitable charge pump for permanent driver activation is provided. A linear regulator is used for bootstrap supply and it also compensates the voltage drop of the bootstrap diode. Measurements from a testchip in 180 nm high-voltage BiCMOS confirm the benefit of high-voltage charge storing. The fully integrated bootstrap circuit with two stacked 75.8 pF and 18.9 pF capacitors results in an expected voltage dip of lower than 1 V. Both bootstrap capacitors require 70% less area compared to a conventional bootstrap circuit. Besides drivers, the proposed bootstrap can also be directly applied to power stages to achieve fully integrated switched mode power supplies or class-D output stages.
The maintenance issue of batteries and the limited power level of energy harvesting is addressed by the presented integrated micropower supply. Connected to the 120/230-VRMS mains, it provides a 3.3-V ac output voltage, suitable for applications such as the Internet-of Things and smart homes. The micropower supply consists of a fully integrated ac–dc and dc–dc converter with one external low-voltage surface mount device buffer capacitor, resulting in an extremely compact size. Fabricated in a low-cost 0.35-μm 700-V complimentary metal-oxide-semiconductor technology, it covers a die size of 7.7 mm². The ac–dc converter is a direct coupled, full-wave rectifier with a subsequent series regulator. The dc–dc stage is a fully integrated capacitive 4:1 converter with up to 17-V input and 47.4% peak efficiency. The power supply comprises several high-voltage control circuits including level shifters and various types of charge pumps (CPs). A source supplied CP is utilized that supports a varying switching node potential. The overall losses are discussed and optimized, including flying capacitor bottom-plate losses. The power supply achieves an output power of 3 mW, resulting in a power density of 390 μW/mm². This exceeds prior art by a factor of 11.
This paper presents a dc–dc converter for integration in the power management unit of an ultra-low power microcontroller. The converter is designed to significantly reduce the wake-up energy and startup delay of the supplied core. The use of a minimized output capacitor is the key factor to save the wake-up energy. The converter is buffered with only 56 nF and guarantees a stable output of 1.2 V with a voltage ripple smaller than 30 mV. The controller of the proposed dc–dc converter is based on a predictive peak current control that allows the system to control the energy transfer at extremely low power consumption. The proposed circuit is implemented in 130 nm CMOS technology with an area of only 0.14 mm². It achieves a high conversion efficiency of 92.1% and a small quiescent current of 440 nA. It operates from 1.8 to 3.3 V with a maximum load of 2.65 mA.
This paper presents a wide-Vin step-down parallel-resonant converter (PRC), comprising an integrated 5-bit capacitor array and a 300-nH resonant coil, placed in parallel to a conventional buck converter. Soft-switching resonant converters are beneficial for high-Vin multi-MHz converters to reduce dominant switching losses, enabling higher switching frequencies. The output filter inductor is optimized based on an empirical study of available inductors. The study shows that faster switching significantly reduces not only the inductor value but also volume, price, and even the inductor losses. In addition, unlike conventional resonant concepts, soft-switching control as part of the proposed PRC eliminates input voltage-dependent losses over a wide operating range, resulting in 76.3% peak efficiency. At Vin = 48 V, a loss reduction of 35% is achieved compared with the conventional buck converter. Adjusting an integrated capacitor array, and selecting the number of oscillation periods, keeps the switching frequency within a narrow range. This ensures high efficiency across a wide range of Vin = 12–48 V, 100–500-mA load, and 5-V output at up to 25-MHz switching frequency. Thanks to the low output current ripple, the output capacitor can be as small
as 50 nF.
This paper presents a fully integrated gate driver in a 180-nm bipolar CMOS DMOS (BCD) technology with 1.5-A max. gate current, suitable for normally OFF gallium nitride (GaN) power switches, including gate-injection transistors (GIT). Full-bridge driver architecture provides a bipolar and three-level gate drive voltage for a robust and efficient GaN switching. The concept of high voltage energy storing (HVES), which comprises an on-chip resonant LC tank, enables a very area-efficient buffer capacitor integration and superior gatedriving speed. It reduces the component count and the influence of parasitic gate-loop inductance. Theory and calculations confirm the benefits of HVES compared to other capacitor implementation methods. The proposed gate driver delivers a gate charge of up to 11.6 nC, sufficient to drive most types of currently available GaN power transistors. Consequently, HVES enables to utilize the fast switching capabilities of GaN for advanced and compact power electronics.
Drei Stufen geben Sicherheit
(2018)
GaN-Transistoren bieten ein enormes Potenzial für kompakte Leistungselektronik, indem sie die Größe von passiven Bauelementen verringern. Allerdings bringt das schnelle Schalten Herausforderungen für den Gate-Treiber mit sich. Ein vollständig integrierter Treiber mit drei Spannungsstufen hilft, diese zu lösen.
A highly integrated synchronous buck converter with a predictive dead time control for input voltages >18 V with 10 MHz switching frequency is presented. A high resolution dead time of ˜125 ps allows to reduce dead time dependent losses without requiring body diode conduction to evaluate the dead time. High resolution is achieved by frequency compensated sampling of the switching node and by an 8 bit differential delay chain. Dead time parameters are derived in a comprehensive study of dead time depended losses. This way, the efficiency of fast switching DC-DC converters can be optimized by eliminating the body diode forward conduction losses, minimizing reverse recovery losses and by achieving zero voltage switching. High-speed circuit blocks for fast switching operation are presented including level shifter, gate driver, PWM generator. The converter has been implemented in a 180 nm high-voltage BiCMOS technology.
Switched-mode power supplies (SMPS) convert an input DC-voltage into a higher or lower output voltage. In automotive, analog control is mostly used in order to keep the required output voltages constant and resistant to disturbances. The design of robust analog control for SMPS faces parameter variations of integrated and external passive components. Using digital control, parameter variations can be eliminated and the required area for the integrated circuit can be reduced at the same time.
Digital control design bears challenges like the prevention of limit cycle oscillations and controller wind-up. This paper reviews how to prevent these effects. Digital control loops introduce new sources for dead times in the control loop, for example the latency of the analog-to-digitalconverter (ADC). Dead times have negative influence on the stability of the control loop, because they lead to phase delays. Consequently, low latency is one of the key requirements for analog-to-digital converters in digitally controlled SMPS.
Exploiting the example of a 500 kHz-buck converter with a crossover frequency of 70 kHz, this paper shows that the 5 μs-latency of a 16-analog-to-digital-converter leads to a reduction in phase margin of 126°. The latency is less critical for boost converters because of their inherent lower crossover frequencies.
Finally, the paper shows a comparison between analog and digital control of SMPS with regard to chip area and test costs.