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Die Erfindung betrifft einen Energieübertrager (100) zur induktiven Energieübertragung von einem primären Schaltkreis (10) des Energieübertragers (100) an eine erste (5) und eine zweite (15) Spannungsdomäne eines sekundären Schaltkreises (20) des Energieübertragers (100) und zur Informationsübertragung vom sekundären Schaltkreis (20) zum primären Schaltkreis (10). Dabei umfasst der Energieübertrager (100): – einen Transformator (30), über den der primäre Schaltkreis (10) und der sekundäre Schaltkreis (20) induktiv miteinander gekoppelt sind und über den sowohl die Energieübertragung als auch die Informationsübertragung erfolgt; und – ein Amplitudenmodulationsmodul (50) zum Modulieren der Strom- und/oder Spannungsamplitude im sekundären Schaltkreis (20) mit Hilfe eines Amplitudenmodulationsschalters (55), wobei der Amplitudenmodulationsschalter (55) zwischen der ersten (5) und zweiten (15) Spannungsdomäne des sekundären Schaltkreises (20) angeordnet ist und ausgelegt ist, durch Öffnen und Schließen des Amplitudenmodulationsschalters (55) die Strom- und/oder Spannungsamplitude im primären Schaltkreis (10) zu ändern, um somit Information vom sekundären Schaltkreis (20) zum primären Schaltkreis (10) zu übertragen. Die vorliegende Erfindung betrifft ferner einen Gate-Treiber zum Schalten eines Leistungsschalters (500) und ein Verfahren zur induktiven Übertragung von Energie und zur kombinierten Informationsübertragung.
Die vorliegende Erfindung betrifft ein Verfahren zur Regelung einer Totzeit in einem Synchronwandler (100), in welchem ein zyklisches Schalten eines Steuerschalters (2) und eines Synchronschalters (3) erfolgen, wobei der Steuerschalter (2) mittels eines ersten Schaltsignals (S1) und der Synchronschalter (3) mittels eines zweiten Schaltsignals (S2) geschaltet werden. Das Verfahren umfasst ein Erfassen und Vorhalten eines Spannungswertes, welcher eine Spannung (VSW) über den Synchronschalter (3) zu einem bestimmten Zeitpunkt beschreibt, und ein Anpassen des ersten und/oder zweiten Schaltsignals (S1, S2) für einen folgenden Zyklus basierend auf dem vorgehaltenen Spannungswert.
Es werden eine elektronische Treiberschaltung und ein Ansteuerverfahren offenbart. Die Treiberschaltung weist einen Ausgang auf; einen ersten Ausgangstransistor mit einem Steuerknoten und einer Laststrecke, wobei die Laststrecke zwischen den Ausgang und einen ersten Versorgungsknoten geschaltet ist; einen Spannungsregler, der dazu ausgebildet ist, eine Spannung über der Laststrecke des ersten Ausgangstransistors zu steuern; und einen ersten Treiber, der dazu ausgebildet ist, den ersten Ausgangstransistor in Abhängigkeit von einem ersten Steuersignal anzusteuern.
A high-voltage replica based current sensor is presented, along with challenges and design techniques which are rarely discussed in literature so far. The performance is evaluated by detailed small signal and large signal analysis. By dedicated placing of high-voltage cascode devices, while keeping as many low-voltage devices as possible, a high gain-bandwidth product is achieved. A decoupling and biasing circuit is introduced which improves the response time of the current sensor at on/off transitions by a factor of five. The current sensor is implemented in a 180nm HV BiCMOS technology. The sensor achieves a DC loop gain of 83 dB and a gain-bandwidth product of 7 MHz. With the proposed techniques, the gain-bandwidth product is increased by a factor of six. The measurable current range is between 60mA and 1.5 A. The performance is demonstrated in a 500 kHz buck converter at an input voltage of 40V. The overall circuit concept is suitable for 100V and beyond, enabling high performance power management designs including switched mode power supplies and motor applications.
Disclosed is an electronic drive circuit and a drive method. The drive circuit includes an output; a first output transistor comprising a control node and a load path, wherein the load path is coupled between the output and a first supply node; a voltage regulator configured to control a voltage across the load path of the first output transistor; and a first driver configured to drive the first output transistor based on a first control signal.
The power supply is one of the major challenges for applications like internet of things IoTs and smart home. The maintenance issue of batteries and the limited power level of energy harvesting is addressed by the integrated micro power supply presented in this paper. Connected to the 120/230 Vrms mains, which is one of the most reliable energy sources and anywhere indoor available, it provides a 3.3V DC output voltage. The micro power supply consists of a fully integrated ACDC and DCDC converter with one external low voltage SMD buffer capacitor. The micro power supply is fabricated in a low cost 0.35 μm 700 V CMOS technology and covers a die size of 7.7 mm². The use of only one external low voltage SMD capacitor, results in an extremely compact form factor. The ACDC is a direct coupled, full wave rectifier with a subsequent bipolar shunt regulator, which provides an output voltage around 17 V. The DCDC stage is a fully integrated 4:1 SC DCDC converter with an input voltage as high as 17 V and a peak efficiency of 45 %. The power supply achieves an overall output power of 3 mW, resulting in a power density of 390 μW/mm². This exceeds prior art by a factor of 11.
The power supply is one of the major challenges for applications like internet of things IoTs and smart home. The maintenance issue of batteries and the limited power level of energy harvesting is addressed by the integrated micro power supply presented in this paper. Connected to the 120/230 Vrms mains, which is one of the most reliable energy sources and anywhere indoor available, it provides a 3.3V DC output voltage. The micro power supply consists of a fully integrated ACDC and DCDC converter with one external low voltage SMD buffer capacitor. The micro power supply is fabricated in a low cost 0.35 μm 700 V CMOS technology and covers a die size of 7.7 mm². The use of only one external low voltage SMD capacitor, results in an extremely compact form factor. The ACDC is a direct coupled, full wave rectifier with a subsequent bipolar shunt regulator, which provides an output voltage around 17 V. The DCDC stage is a fully integrated 4:1 SC DCDC converter with an input voltage as high as 17 V and a peak efficiency of 45 %. The power supply achieves an overall output power of 3 mW, resulting in a power density of 390 μW/mm². This exceeds prior art by a factor of 11.
A highly integrated synchronous buck converter with a predictive dead time control for input voltages >18 V with 10 MHz switching frequency is presented. A high resolution dead time of ˜125 ps allows to reduce dead time dependent losses without requiring body diode conduction to evaluate the dead time. High resolution is achieved by frequency compensated sampling of the switching node and by an 8 bit differential delay chain. Dead time parameters are derived in a comprehensive study of dead time depended losses. This way, the efficiency of fast switching DC-DC converters can be optimized by eliminating the body diode forward conduction losses, minimizing reverse recovery losses and by achieving zero voltage switching. High-speed circuit blocks for fast switching operation are presented including level shifter, gate driver, PWM generator. The converter has been implemented in a 180 nm high-voltage BiCMOS technology.
In recent years, significant progress has been made on switched-capacitor DC-DC converters as they enable fully integrated on-chip power management. New converter topologies overcame the fixed input-to-output voltage limitation and achieved high efficiency at high power densities. SC converters are attractive to not only mobile handheld devices with small input and output voltages, but also for power conversion in IoE, industrial and automotive applications, etc. Such applications need to be capable of handling widely varying input voltages of more than 10V, which requires a large amount of conversion ratios. The goal is to achieve a fine granularity with the least number of flying capacitors. In [1] an SC converter was introduced that achieves these goals at low input voltage VIN ≤ 2.5V. [2] shows good efficiency up to VIN = 8V while its conversion ratio is restricted to ≤1/2 with a limited, non-equidistant number of conversion steps. A particular challenge arises with increasing input voltage as several loss mechanisms like parasitic bottom-plate losses and gate-charge losses of high-voltage transistors become of significant influence. High input voltages require supporting circuits like level shifters, auxiliary supply rails etc., which allocate additional area and add losses [2-5]. The combination of both increasing voltage and conversion ratios (VCR) lowers the efficiency and the achievable output power of SC converters. [3] and [5] use external capacitors to enable higher output power, especially for higher VIN. However, this is contradictory to the goal of a fully integrated power supply.