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In a digitally controlled slope shaping system, reliable detection of both voltage and current slope is required to enable a closed-loop control for various power switches independent of system parameters. In most state-of-the-art works, this is realized by monitoring the absolute voltage and current values. Better accuracy at lower DC power loss is achieved by sensing techniques for a reliable passive detection, which is achieved through avoiding DC paths from the high voltage network into the sensing network. Using a high-speed analog-to-digital converter, the whole waveform of the transient derivative can be stored digitally and prepared for a predictive cycle-by-cycle regulation, without requiring high-precision digital differentiation algorithms. To gain an accurate representation of the voltage and current derivative waveforms, system parasitics are investigated and classified in three sections: (1) component parasitics, which are identified by s-parameter measurements and extraction of equivalent circuit models, (2) PCB design issues related to the sensing circuit, and (3) interconnections between adjacent boards.
The contribution of this paper is an optimized sensing network on the basis of the experimental study supporting fast transition slopes up to 100 V/ns and 1 A/ns and beyond, making the sensing technique attractive for slope shaping of fast switching devices like modern generation IGBTs, CoolMOSTM and SiC mosfets. Measurements of the optimized dv/dt and di/dt setups are demonstrated for a hard switched IGBT power stage.
A concept for a slope shaping gate driver IC is proposed, used to establish control over the slew rates of current and voltage during the turn-on and turn off switching transients.
It combines the high speed and linearity of a fully-integrated closed-loop analog gate driver, which is able to perform real-time regulation, with the advantages of digital control, like flexibility and parameter independency, operating in a predictive cycle-bycycle regulation. In this work, the analog gate drive integrated circuit is partitioned into functional blocks and modeled in the small-signal domain, which also includes the non-linearity of parameters. An analytical stability analysis has been performed in order to ensure full functionality of the system controlling a modern generation IGBT and a superjunction MOSFET. Major parameters of influence, such as gate resistor and summing node capacitance, are investigated to achieve stable control. The large-signal behavior, investigated by simulations of a transistor level design, verifies the correct operation of the circuit. Hence, the gate driver can be designed for robust operation.
Modern power transistors are able to switch at very high transition speed, which can cause EMC violations and overshoot. This is addressed by a gate driver with variable gate current, which is able to control the transition speed. The key idea is that the gate driver can influence the di/dt and dv/dt transition separately and optimize whichever transition promises the highest improvement while keeping switching losses low. To account for changes in the load current, supply voltage, etc., a control loop is required in the driver to ensure optimized switching. In this paper, an efficient control scheme for an automotive gate driver with variable output current capability is presented. The effectiveness of the control loop is demonstrated for a MOSFET bridge consisting of OptiMOS-T2™devices with a total gate charge of 39nC. This bridge setup shows dv/dt transitions between 50 to 1000ns, depending on driving current. The driver is able to switch between gate current levels of 1 to 500mA in 10/15ns (rising/falling transition). With the implemented control loop the driver is measured to significantly reduce the ringing and thereby reduce device stress and electromagnetic emissions while keeping switching losses 52% lower than with a constant current driver.
More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ~10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ~15V for Si.
Die Erfindung betrifft eine Vorrichtung (100) und ein Verfahren zum elektrischen Verbinden und Trennen zweier elektrischer Potentiale (1, 2). Des Weiteren betrifft die Erfindung eine Verwendung der Vorrichtung (100). Dabei umfasst die Vorrichtung (100): – ein erstes Modul, welches einen ersten und einen zweiten Transistor (10a, 10b) umfasst, wobei der erste Transistor (10a) antiseriell zu dem zweiten Transistor (10b) geschaltet ist; und – ein zweites Modul, welches einen dritten und einen vierten Transistor (10c, 10d) umfasst, wobei der dritte Transistor (10c) antiseriell zu dem vierten Transistor (10d) geschaltet ist; wobei das erste Modul und das zweite Modul parallel geschaltet sind.
The presented wide-Vin step-down converter introduces a parallel-resonant converter (PRC), comprising an integrated 5-bit capacitor array and a 300 nH resonant coil, placed in parallel to a conventional buck converter. Unlike conventional resonant concepts, the implemented soft-switching control eliminates input voltage dependent losses over a wide operating range. This ensures high efficiency across a wide range of Vin= 12-48V, 100-500mA load and 5V output at up to 15MHz switching frequency. The peak efficiency of the converter is 76.3 %. Thanks to the low output current ripple, the output capacitor can be as small as 50 nF, while the inductor tolerates a larger ESR, resulting in small component size. The proposed PRC architecture is also suitable for future power electronics applications using fast-switching GaN devices.
A device including a first and second monitoring unit, the first monitoring unit detecting a first voltage potential and the second monitoring unit detecting a second voltage potential, the monitoring units comparing the first voltage potential and the second voltage potential to the value of the supply voltage and activate a control unit as a function of the comparisons, the control unit determining a switching point in time of a second power transistor, and an arrangement being present which generates current when the second power transistor is being switched on, the current changing the first voltage potential, and the control unit activates a first power transistor when the first voltage potential has the same value as the supply voltage, so that the first power transistor is de-energized.
Erfindungsgemäß wird ein Verfahren zur Optimierung des Betriebs eines in einem Regelkreis für einen Aufwärtswandler vorgesehenen digitalen Reglers (30) zur Verfügung gestellt. Das Verfahren umfasst die folgenden Verfahrensschritte: Auswerten (S1) mindestens einer Ausgangsgröße des digitalen Reglers im Betrieb des Aufwärtswandlers. Schätzen (S2) des instantanen Lastwiderstandswertes (RL) in der Strecke des Regelkreises anhand der mindestens einen ausgewerteten Ausgangsgröße. Einstellen (S3) mindestens eines Reglerkoeffizienten des digitalen Reglers anhand des geschätzten instantanen Lastwiderstandswertes (RL) im Betrieb des Aufwärtswandlers. Erfindungsgemäß bedingt eine Veränderung in der Einstellung des mindestens einen Reglerkoeffizienten eine Veränderung der Transitfrequenz im Regelkreis. Ferner wird ein Regelkreis für einen Aufwärtswandler mit einem digitalen Regler zur Verfügung gestellt, welcher eingerichtet ist, um die Schritte des erfindungsgemäßen Verfahrens durchzuführen. Des Weiteren wird ein Computerprogrammprodukt mit computerausführbarem Programmcode zur Durchführung des erfindungsgemäßen Verfahrens zur Verfügung gestellt.
This article covers the design of highly integrated gate drivers and level shifters for high-speed, high power efficiency and dv/dt robustness with focus on automotive applications. With the introduction of the 48 V board net in addition to the conventional 12 V battery, there is an increasing need for fast switching integrated gate drivers in the voltage range of 50 V and above. State-of-the-art drivers are able to switch 50 V in less than 5 ns. The high-voltage electrical drive train demands for galvanic isolated and highly integrated gate drivers. A gate driver with bidirectional signal transmission with a 1 MBit/s amplitude modulation, 10/20 MHz frequency modulation and power transfer over one single transformer will be discussed. The concept of high-voltage charge storing enables an area-efficient fully integrated bootstrapping supply with 70 % less area consumption. EMC is a major concern in automotive. Gate drivers with slope control optimize EMC while maintaining good switching efficiency. A current mode gate driver, which can change its drive current within 10 ns, results in 20 dBuV lower emissions between 7 and 60 MHz and 52 % lower switching loss compared to a conventional constant current gate driver.