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The level shifter and the floating gate supply for high-side transistors are a major challenge in high-voltage DCDC converters. This paper presents a high speed and power-efficient level shifter for voltages of up to 50V, suitable for both PMOS and NMOS power FETs. A switching node falling edge detection allows both, a sensitive and safe signal detection. This enables a robust operation during steep dv / dt transitions and a power consumption as low as 4.1 pJ per switching cycle, which is a reduction of more than 40% compared to prior art. An active clamping circuit prevents common mode displacement currents into the high-side supply. The level shifter is implemented in a 180nm BiCMOS technology. Measurements confirm a 50V 120MHz high-speed operation of the level shifter with a rising / falling propagation delay of 1.45 ns / 1.3 ns, respectively. The dv / dt robustness has been confirmed by measurements for transitions up to 6V/ ns.
The maintenance issue of batteries and the limited power level of energy harvesting is addressed by the presented integrated micropower supply. Connected to the 120/230-VRMS mains, it provides a 3.3-V ac output voltage, suitable for applications such as the Internet-of Things and smart homes. The micropower supply consists of a fully integrated ac–dc and dc–dc converter with one external low-voltage surface mount device buffer capacitor, resulting in an extremely compact size. Fabricated in a low-cost 0.35-μm 700-V complimentary metal-oxide-semiconductor technology, it covers a die size of 7.7 mm². The ac–dc converter is a direct coupled, full-wave rectifier with a subsequent series regulator. The dc–dc stage is a fully integrated capacitive 4:1 converter with up to 17-V input and 47.4% peak efficiency. The power supply comprises several high-voltage control circuits including level shifters and various types of charge pumps (CPs). A source supplied CP is utilized that supports a varying switching node potential. The overall losses are discussed and optimized, including flying capacitor bottom-plate losses. The power supply achieves an output power of 3 mW, resulting in a power density of 390 μW/mm². This exceeds prior art by a factor of 11.