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Size and cost of a switched mode power supply can be reduced by increasing the switching frequency. The maximum switching frequency and the maximum input voltage range, respectively, is limited by the minimum propagated on-time pulse, which is mainly determined by the level shifter speed. At switching frequencies above 10 MHz, a voltage conversion with an input voltage range up to 50 V and output voltages below 5 V requires an on-time of a pulse width modulated signal of less than 5 ns. This cannot be achieved with conventional level shifters. This paper presents a level shifter circuit, which controls an NMOS power FET on a high-voltage domain up to 50 V. The level shifter was implemented as part of a DCDC converter in a 180 nm BiCMOS technology. Experimental results confirm a propagation delay of 5 ns and on-time pulses of less than 3 ns. An overlapping clamping structure with low parasitic capacitances in combination with a high-speed comparator makes the level shifter also very robust against large coupling currents during high-side transitions as fast as 20 V/ns, verified by measurements. Due to the high dv/dt, capacitive coupling currents can be two orders of magnitude larger than the actual signal current. Depending on the conversion ratio, the presented level shifter enables an increase of the switching frequency for multi-MHz converters towards 100 MHz. It supports high input voltages up to 50 V and it can be applied also to other high-speed applications.
A highly integrated synchronous buck converter with a predictive dead time control for input voltages >18 V with 10 MHz switching frequency is presented. A high resolution dead time of ˜125 ps allows to reduce dead time dependent losses without requiring body diode conduction to evaluate the dead time. High resolution is achieved by frequency compensated sampling of the switching node and by an 8 bit differential delay chain. Dead time parameters are derived in a comprehensive study of dead time depended losses. This way, the efficiency of fast switching DC-DC converters can be optimized by eliminating the body diode forward conduction losses, minimizing reverse recovery losses and by achieving zero voltage switching. High-speed circuit blocks for fast switching operation are presented including level shifter, gate driver, PWM generator. The converter has been implemented in a 180 nm high-voltage BiCMOS technology.
An integrated synchronous buck converter with a high resolution dead time control for input voltages up to 48V and 10MHz switching frequency is presented. The benefit of an enhanced dead time control at light loads to enable zero voltage switching at both the high-side and low-side switch at low output load is studied. This way, compact multi-MHz DCDC converters can be implemented at high efficiency over a wide load current range. The concept also eliminates body diode forward conduction losses and minimizes reverse recovery losses. A dead time resolution of 125 ps is realized by an 8-bit differential delay chain. A further efficiency enhancement by soft switching at the high-side switch at light load is achieved with a voltage boost of the switching node by dead time control in forced continuous conduction mode. The monolithic converter is implemented in an 180nm high-voltage BiCMOS technology. At V IN = 48V, V OUT = 5V, 50mA load, 10MHz switching frequency and 500 nH output inductance, the efficiency is measured to be increased by 14.4% compared to a conventional predictive dead time control. A peak efficiency of 80.9% is achieved at 12V input.
This paper presents an integrated synchronous buck converter for input voltages >12V with 10MHz switching frequency. The converter comprises a predictive dead time control with frequency compensated sampling of the switching node which does not require body diode forward conduction. A high dead time resolution of 125 ps is achieved by a differential delay chain with 8-bit resolution. This way, the efficiency of fast switching DCDC converters can be optimized by eliminating the body diode forward conduction losses, minimizing reverse recovery losses and by achieving zero voltage switching at turn off. The converter was implemented in a 180nm high-voltage BiCMOS technology. The power losses were measured to be reduced by 30%by the proposed dead time control, which results in a 6% efficiency increase at VOUT = 5V and 0.2A load. The peak efficiency is 81 %.
Size and cost of a switched mode power supply can be reduced by increasing the switching frequency. The maximum switching frequency and the maximum conversion ratio are limited by the duty cycle of a PWM signal. In DCDC converters, a sawtooth generator is the fundamental circuit block to generate the PWM signal. The presented PWM generator is based on two parallel, fully interleaved PWM generator stages, each containing an integrator based sawtooth generator and two 3-stage highspeed comparators. A digital multiplexing of the PWM signals of each stage eliminates the dependency of the minimum on-time on the large reset times of the sawtooth ramps. A separation of the references of the PWM comparators in both stage allows to configure the PWM generator for a DCDC converter operating in fixed frequency or in constant on-time mode, which requires an operation in a wide frequency range. The PWM generator was fabricated in an 180 nm HV BiCMOS technology, as part of a DCDC converter. Measurements confirm minimum possible ontime pulses as short as 2 ns and thus allows switching frequencies of DCDC converters of >50 MHz at small duty cycle of <10%. At moderate duty cycles switching frequencies up to 100 MHz are possible.
Substrate coupling is a critical failure mechanism especially in fast-switching integrated power stages controlling high-side NMOS power FETs. The parasitic coupling across the substrate in integrated power stages at rise times of up to 500 ps and input voltages of up to 40V is investigated in this paper. The coupling has been studied for the power stage of an integrated buck converter. In particular, dedicated diverting and isolation structures against substrate coupling are analyzed by simulations and evaluated with measurements from test chips in 180nm high-voltage BiCMOS. The results are compared regarding effectiveness, area as well as implementation effort and cost. Back-side metalization shows superior characteristics with nearly 100% noise suppression. Readily available p-guard ring structures bring 75% disturbance reduction. The results are applicable to advanced and future power management solutions with fully integrated switched-mode power supplies at switching frequencies >10 MHz.
A 20 V, 8 MHz resonant DCDC converter with predictive control for 1 ns resolution soft-switching
(2015)
Fast switching power supplies allow to reduce the size and cost of external passive components. However, the capacitive switching losses of the power stage will increase and become the dominant part of the total losses. Therefore, resonant topologies are the known key to reduce the losses of the power stage. A power switch with an additional resonant circuit can be turned on under soft-switching conditions, ideally with zero-voltage-switching (ZVS). As conventional resonant converts are only efficient for a constant load, this paper presents a predictive regulation loop to approach soft-switching conditions under varying load and component tolerances. A sample and hold based detection circuit is utilized to control the turn-on of the power switch by a digital regulation. The proposed design was fabricated in a 180 nm high-voltage BiCMOS technology. The efficiency of the converter was measured to be increased by up to 16 % vs. worst case timing and by 13 % compared to a conventional hard-switching buck converter at 20 V input voltage and at approximately 8 MHz switching frequency.
The presented wide-Vin step-down converter introduces a parallel-resonant converter (PRC), comprising an integrated 5-bit capacitor array and a 300 nH resonant coil, placed in parallel to a conventional buck converter. Unlike conventional resonant concepts, the implemented soft-switching control eliminates input voltage dependent losses over a wide operating range. This ensures high efficiency across a wide range of Vin= 12-48V, 100-500mA load and 5V output at up to 15MHz switching frequency. The peak efficiency of the converter is 76.3 %. Thanks to the low output current ripple, the output capacitor can be as small as 50 nF, while the inductor tolerates a larger ESR, resulting in small component size. The proposed PRC architecture is also suitable for future power electronics applications using fast-switching GaN devices.
This paper presents a wide-Vin step-down parallel-resonant converter (PRC), comprising an integrated 5-bit capacitor array and a 300-nH resonant coil, placed in parallel to a conventional buck converter. Soft-switching resonant converters are beneficial for high-Vin multi-MHz converters to reduce dominant switching losses, enabling higher switching frequencies. The output filter inductor is optimized based on an empirical study of available inductors. The study shows that faster switching significantly reduces not only the inductor value but also volume, price, and even the inductor losses. In addition, unlike conventional resonant concepts, soft-switching control as part of the proposed PRC eliminates input voltage-dependent losses over a wide operating range, resulting in 76.3% peak efficiency. At Vin = 48 V, a loss reduction of 35% is achieved compared with the conventional buck converter. Adjusting an integrated capacitor array, and selecting the number of oscillation periods, keeps the switching frequency within a narrow range. This ensures high efficiency across a wide range of Vin = 12–48 V, 100–500-mA load, and 5-V output at up to 25-MHz switching frequency. Thanks to the low output current ripple, the output capacitor can be as small
as 50 nF.