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Due to the lack of sophisticated component libraries for microelectromechanical systems (MEMS), highly optimized MEMS sensors are currently designed using a polygon driven design flow. The advantage of this design flow is its accurate mechanical simulation, but it lacks a method for an efficient and accurate electrostatic analysis of parasitic effects of MEMS. In order to close this gap in the polygon-driven design flow, we present a customized electrostatic analysis flow for such MEMS devices. Our flow features a 2.5D fabrication-process simulation, which simulates the three typical MEMS fabrication steps (namely deposition of materials including topography, deep reactive-ion etching, and the release etch by vapor-phase etching) very fast and on an acceptable abstraction level. Our new 2.5D fabrication-process simulation can be combined with commercial field-solvers such as they are commonly used in the design of integrated circuits. The new process simulation enables a faster but nevertheless satisfactory analysis of the electrostatic parasitic effects, and hence simplifies the electrical optimization of MEMS.
Due to the lack of sophisticated component libraries for microelectromechanical systems (MEMS), highly optimized MEMS sensors are currently designed using a polygon driven design flow. The advantage of this design flow is its accurate mechanical simulation, but it lacks a method for analyzing the dynamic parasitic electrostatic effects arising from the electric coupling between (stationary) wiring and structures in motion. In order to close this gap, we present a method that enables the parasitics arising from in-plane, sensor-structure motion to be extracted quasi-dynamically. With the method's structural-recognition feature we can analyze and optimize dynamic parasitic electrostatic effects.