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Due to the lack of sophisticated component libraries for microelectromechanical systems (MEMS), highly optimized MEMS sensors are currently designed using a polygon driven design flow. The advantage of this design flow is its accurate mechanical simulation, but it lacks a method for analyzing the dynamic parasitic electrostatic effects arising from the electric coupling between (stationary) wiring and structures in motion. In order to close this gap, we present a method that enables the parasitics arising from in-plane, sensor-structure motion to be extracted quasi-dynamically. With the method's structural-recognition feature we can analyze and optimize dynamic parasitic electrostatic effects.
Electromigration (EM) is becoming a progressively severe reliability challenge due to increased interconnect current densities. A shift from traditional (post-layout) EM verification to robust (pro-active) EM aware design - where the circuit layout is designed with individual EM-robust solutions - is urgently needed. This tutorial will give an overview of EM and its effects on the reliability of present and future integrated circuits (ICs). We introduce the physical EM process and present its specific characteristics that can be affected during physical design. Examples of EM countermeasures which are applied in today’s commercial design flows are presented. We show how to improve the EM-robustness of metallization patterns and we also consider mission proiles to obtain application-oriented current density limits. The increasing interaction of EM with thermal migration is investigated as well. We conclude with a discussion of application examples to shift from the current post layout EM verification towards an EM aware physical design process. Its methodologies, such as EM-aware routing, increase the EM-robustness of the layout with the overall goal of reducing the negative impact of EM on the circuit’s reliability.