621 Angewandte Physik
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While digital IC design is highly automated, analog circuits are still handcrafted in a time-consuming, manual fashion today. This paper introduces a novel Parameterized Circuit Description Scheme (PCDS) for the development of procedural analog schematic generators as parameterized circuits. Circuit designers themselves can use PCDS to create circuit automatisms which capture valuable expert knowledge, offer full topological flexibility, and enhance the re-use of well-established topologies. The generic PCDS concept has been successfully implemented and employed to create parameterized circuits for a broad range of use cases. The achieved results demonstrate the efficiency of our PCDS approach and the potential of parameterized circuits to increase automation in circuit design, also to benefit physical design by promoting the common schematic-driven-layout flow, and to enhance the applicability of circuit synthesis approaches.
Today 40 Gbps is in development at IEEE 802.3bq over four pair balanced cabling. In this paper, we describe a transmission experiment of 25 Gbps enabling either a single pair transmission of 25 Gbps over a 30 meter balanced cabling channel, or a 100 Gbps transmission via a four-pair balanced channel. A scalable matrix modeling tool is introduced which allows the prediction of transmission characteristics of a channel taking mode conversion into account . We applied this tool to characterize PCB-channels including the magnetics and PCB for a four-pair 100 Gbps transmission. We evaluated prototype cables and connecting hardware for frequencies up to 2 GHz and beyond. Finally we investigated possible line encoding schemes and provide measurement results of a transmission over 30 m with a data rate of 25 Gbps per twisted pair.
In this paper, research projects with 30 meter balanced cabling and data rates up to 25 Gbps over one single pair are described. The project aim is to achieve 100 Gbps via a four pair balanced cabling channel. In the following, spectral characteristics of the used prototype twisted pair are presented. Therefore, the insertion loss of the single cable in comparison to the insertion loss of the cable in combination with an equalizing amplifier, as well as the group delay of the cable and the cable connected to the equalizing amplifier is shown. Furthermore, a carrierless Pulse Amplitude Modulation with 32 different levels (PAM-32) as an approach for a possible line encoding is presented. Finally, research measurements of the data transmission with a data rate up to 25 Gbps via shielded twisted pair is shown.
IGBT modules with anti-parallel FWDs are widely used in inductive load switching power applications, such as motor drive applications. Nowadays there is a continuous effort to increase the efficiency of such systems by decreasing their switching losses. This paper addresses the problems arising in the turn-on process of an IGBT working in hard-switching conditions. A method is proposed which achieves – contrary to most other approaches – a high switching speed and, at the same time, a low peak reverse-recovery current. This is done by applying an improved gate current waveform that is briefly lowered during the turn-on process. The proposed method achieves low switching losses. Its effectiveness is demonstrated by experimental results with IGBT modules for 600V and 1200V.
This paper presents a new broadband antenna for satellite communications. It describes the procedure involved in the design of a microstrip antenna array and its multi-level passive feed network that together yield circular polarization and the necessary gain to be used in an earth-satellite link. The designed antenna is notable for its large bandwidth, circular polarization, high gain and small dimensions.
This paper presents the design and simulation processes of an Equiangular Spiral Antenna for the extremely high frequencies between 65 GHz and 170 GHz. A new approach for the analysis of the antenna’s electrical parameters is described. This approach is based on formalism proposed by Rumsey to determine the EM field produced by an equiangular spiral antenna. Analytical expressions of the electrical parameters such as the gain or the directivity are then calculated using well sustained mathematical approximations. The comparison of obtained results with those from numerical integration methods shows a good agreement.
Die Hochschule Reutlingen hat eine vergleichende Untersuchung an Spannfuttern für Schaftfräser vorgenommen. Fazit: Die Steifigkeit einer Aufnahme hat einen stärkeren Einfluss auf das Schwingverhalten als das Dämpfungsvermögen.
Das dynamische Verhalten von Werkzeugmaschinen besitzt entscheidenden Einfluss auf die Bearbeitungsergebnisse. Zusammen mit dem Eigenverhalten der Maschine und dem Werkstück ergibt dies die für die Bearbeitungsgenauigkeit entscheidende statische Steifigkeit und die dynamische Nachgiebigkeit. Im Folgenden wird das Zusammenspiel dieser Komponenten im System näher dargestellt.
Prior studies ascribed people’s poor performance in dealing with basic systems concepts to different causes. While results indicate that, among other things, domain specific experience and familiarity with the problem context play a role in this stock-flow-(SF-)performance, this has not yet been fully clarified. In this article, we present an experiment that examines the role of educational background in SF-performance. We hypothesize that SF-performance increases when the problem context is embedded in the problem solver’s knowledge domain, indicated by educational background. Using the square wave pattern and the sawtooth pattern tasks from the initial study by Booth Sweeney and Sterman (2000), we design two additional cover stories for the former, the Vehicle story from the engineering domain and the Application story from the business domain, next to the original Bathtub story. We then test the three sets of questions on business students. Results mainly support our hypothesis. Interestingly, participants even do better on a more complex behavioral pattern from their knowledge domain than on a simpler pattern from more distant domains. Although these findings have to be confirmed by further studies, they contribute both to the methodology of future surveys and the context familiarity discussion.
A millimeter-wave power amplifier concept in an advanced silicon germanium (SiGe) BiCMOS technology is presented. The goal of the concept is to investigate the impact of physical limitations of the used heterojunction bipolar transistors (HBT) on the performance of a 77 GHz power amplifier. High current behavior, collectorbase breakdown and transistor saturation can be forced with the presented design. The power amplifier is manufactured in an advanced SiGe BiCMOS technology at Infineon Technologies AG with a maximum transit frequency fT of around 250 GHz for npn HBT’s [1]. The simulation results of the power amplifier show a saturated output power of 16 dBm at a power added efficiency of 13%. The test chip is designed for a supply voltage of 3.3 V and requires a chip size of 1.448 x 0.930 mm².