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Transient junction temperature measurements of power MOSFETs in the μs range

  • The experimental characterization of the thermal impedance Zth of large power MOSFETs is commonly done by measuring the junction temperature Tj in the cooling phase after the device has been heated, preferably to a high junction temperature for increased accuracy. However, turning off a large heating current (as required by modern MOSFETs with low on-state resistances) takes some time because of parasitic inductances in the measurement system. Thus, most setups do not allow the characterization of the junction temperature in the time range below several tens of μs. In this paper, an optimized measurement setup is presented which allows accurate Tj characterization already 3 μs after turn-off of heating. With this, it becomes possible to experimentally investigate the influence of thermal capacitances close to the active region of the device. Measurement results will be presented for advanced power MOSFETs with very large heating currents up to 220 A. Three bonding variants are investigated and the observed differences will be explained.

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Metadaten
Author of HS ReutlingenEbli, Michael; Pfost, Martin; Wendel, Christoph
DOI:https://doi.org/10.1109/SEMI-THERM.2015.7100171
ISBN:978-1-4799-8600-2
Erschienen in:SEMI-THERM : 31st Annual Semiconductor Thermal Measurement and Management Symposium ; proceedings 2015 ; San Jose, CA, USA, March 15-19, 2015
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:Conference Proceeding
Language:English
Year of Publication:2015
Tag:Zth measurement setup; junction temperature measurements; power MOSFET; transient junction temperature
Page Number:6
First Page:267
DDC classes:536 Wärme
Open Access?:Nein
Licence (German):License Logo  Lizenzbedingungen IEEE