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Modern power transistors are able to switch at very high transition speed, which can cause EMC violations and overshoot. This is addressed by a gate driver with variable gate current, which is able to control the transition speed. The key idea is that the gate driver can influence the di/dt and dv/dt transition separately and optimize whichever transition promises the highest improvement while keeping switching losses low. To account for changes in the load current, supply voltage, etc., a control loop is required in the driver to ensure optimized switching. In this paper, an efficient control scheme for an automotive gate driver with variable output current capability is presented. The effectiveness of the control loop is demonstrated for a MOSFET bridge consisting of OptiMOS-T2™devices with a total gate charge of 39nC. This bridge setup shows dv/dt transitions between 50 to 1000ns, depending on driving current. The driver is able to switch between gate current levels of 1 to 500mA in 10/15ns (rising/falling transition). With the implemented control loop the driver is measured to significantly reduce the ringing and thereby reduce device stress and electromagnetic emissions while keeping switching losses 52% lower than with a constant current driver.
More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ~10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ~15V for Si.
The presented wide-Vin step-down converter introduces a parallel-resonant converter (PRC), comprising an integrated 5-bit capacitor array and a 300 nH resonant coil, placed in parallel to a conventional buck converter. Unlike conventional resonant concepts, the implemented soft-switching control eliminates input voltage dependent losses over a wide operating range. This ensures high efficiency across a wide range of Vin= 12-48V, 100-500mA load and 5V output at up to 15MHz switching frequency. The peak efficiency of the converter is 76.3 %. Thanks to the low output current ripple, the output capacitor can be as small as 50 nF, while the inductor tolerates a larger ESR, resulting in small component size. The proposed PRC architecture is also suitable for future power electronics applications using fast-switching GaN devices.
A gate driver approach is presented for the reduction of turn-on losses in hard switching applications. A significant turn-on loss reduction of up to 55% has been observed for SiCMOSFETs. The gate driver approach uses a transformer which couples energy from the power path back into the gate path during switching events, providing increased gate driver current and thereby faster switching speed.
The gate driver approach was tested on a boost converter running at a switching frequency up to 300 kHz. With an input voltage of 300V and an output voltage of 600V, it was possible to reduce the converter losses by 8% at full load. Moreover, the output power range could be extended by 23% (from 2.75kW to 3.4 kW) due to the reduction of the turn-on losses.
We present a new methodology for automatic selection and sizing of analog circuits demonstrated on the OTA circuit class. The methodology consists of two steps: a generic topology selection method supported by a “part-sizing” process and subsequent final sizing. The circuit topologies provided by a reuse library are classified in a topology tree. The appropriate topology is selected by traversing the topology tree starting at the root node. The decision at each node is gained from the result of the part-sizing, which is in fact a node-specific set of simulations. The final sizing is a simulation-based optimization. We significantly reduce the overall simulation effort compared to a classical simulation-based optimization by combining the topology selection with the part-sizing process in the selection loop. The result is an interactive user friendly system, which eases the analog designer’s work significantly when compared to typical industrial practice in analog circuit design. The topology selection method and sizing process are implemented as a tool into a typical analog design environment. The design productivity improvement achievable by our method is shown by a comparison to other design automation approaches.
A new method for the analysis of movement dependent parasitics in full custom designed MEMS sensors
(2017)
Due to the lack of sophisticated microelectromechanical systems (MEMS) component libraries, highly optimized MEMS sensors are currently designed using a polygon driven design flow. The strength of this design flow is the accurate mechanical simulation of the polygons by finite element (FE) modal analysis. The result of the FE-modal analysis is included in the system model together with the data of the (mechanical) static electrostatic analysis. However, the system model lacks the dynamic parasitic electrostatic effects, arising from the electric coupling between the wiring and the moving structures. In order to include these effects in the system model, we present a method which enables the quasi dynamic parasitic extraction with respect to in-plane movements of the sensor structures. The method is embedded in the polygon driven MEMS design flow using standard EDA tools. In order to take the influences of the fabrication process into account, such as etching process variations, the method combines the FE-modal analysis and the fabrication process simulation data. This enables the analysis of dynamic changing electrostatic parasitic effects with respect to movements of the mechanical structures. Additionally, the result can be included into the system model allowing the simulation of positive feedback of the electrostatic parasitic effects to the mechanical structures.
This paper introduces a novel placement methodology for a common-centroid (CC) pattern generator. It can be applied to various integrated circuit (IC) elements, such as transistors, capacitors, diodes, and resistors. The proposed method consists of a constructive algorithm which generates an initial, close to the optimum, solution, and an iterative algorithm which is used subsequently, if the output of constructive algorithm does not satisfy the desired criteria. The outcome of this work is an automatic CC placement algorithm for IC element arrays. Additionally, the paper presents a method for the CC arrangement evaluation. It allows for evaluating the quality of an array, and a comparison of different placement methods.
A novel configuration of the dual active bridge (DAB) DC/DC converter is presented, enabling more efficient wide voltage range conversion at light loads. A third phase leg as well as a center tapped transformer are introduced to one side of the converter. This concept provides two different turn ratios, thus extending the zero voltage switching operation resulting in higher efficiency. A laboratory prototype was built converting an input voltage of 40V to an output voltage in the range of 350V to 650V. Measurements show a significant increase up to 20% in the efficiency for light-load operation.
Modern power semiconductor devices have low capacitances and can therefore achieve very fast switching transients under hard-switching conditions. However, these transients are often limited by parasitic elements, especially by the source inductance and the parasitic capacitances of the power semiconductor. These limitations cannot be compensated by conventional gate drivers. To overcome this, a novel gate driver approach for power semiconductors was developed. It uses a transformer which accelerates the switching by transferring energy from the source path to the gate path.
Experimental results of the novel gate driver approach show a turn-on energy reduction of 78% (from 80 μJ down to 17 μJ) with a drain-source voltage of 500V and a drain current of 60 A. Furthermore, the efficiency improvement is demonstrated for a hard-switching boost converter. For a switching frequency of 750 kHz with an input voltage of 230V and an output voltage of 400V, it was possible to extend the output power range by 35%(from 2.3kW to 3.1 kW), due to the reduction of the turn-on losses, therefore lowering the junction temperature of the GaN-HEMT.
This work presents a spiral antenna array, which can be used in the V- and W-Band. An array equipped with Dolph-Chebychev coefficients is investigated to address issues related to the low gain and side lobe level of the radiating structure. The challenges encountered in this achievement are to provide an antenna that is not only good matched but also presents an appreciable effective bandwidth at the frequency bands of interest. Its radiation properties including the effective bandwidth and the gain are analyzed for the W-Band.