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Rattern unerwünscht
(2018)
Die Mesago Messe Frankfurt als Veranstalter der Formnext 2018 haben von Prof. Dr.-Ing. Steffen Ritter von der Hochschule Reutlingen eine anschauliche Übersicht erstellen lassen, welche die Vielfalt der unterschiedlichen Verfahren zur additiven Fertigung verständlich erklärt. Die kleine, zweisprachige Broschüre mit dem Titel „AM Field Guide“ bietet auf 12 Seiten strukturierte Vergleichsdarstellungen von insgesamt 19 gängigen 3-D-Druck Technologien für Kunststoffe, Metalle sowie andere Werkstoffe und dazu noch einen Überblick über die Phasen und Prozessschritte in Projekten für Bauteile, die additiv hergestellt werden.
Nowadays robust, energy-efficient multisensor microsystems often come with heavily restricted power budgets and the characteristic of remaining in certain states for a longer period of time. During this time frame there is no continuous clock signal required which gives the opportunity to suspend the clock until a new transition is requested. In this paper, we present a new topology for on-demand locally clocked finite state machines. The architecture combines a local adaptive clocking approach with synchronous and asynchronous components forming a quasi synchronous system. Using adaptive and local clocking comes with the advantages of reducing the power consumption while saving design effort when no global clock tree is needed. Combining synchronous and asynchronous components is beneficial compared to previous fully asynchronous approaches concerning the design restrictions. The developed topology is verified by the implementation and simulation of a temperature-ADC sensor system realized in a 180 nm process.
Im Vergleich zum digitalen Layoutentwurf weist der analoge Layoutentwurf einen wesentlich geringeren Automatisierungsgrad auf. Dies gilt insbesondere für den Layoutentwurf von Hochfrequenzschaltungen, wo Einflüsse der lokalen Layoutumgebung besonders zu berücksichtigen sind. Bei dieser sog. Kontextabhängigkeit geraten sowohl Optimierungsalgorithmen als auch herkömmliche Generatoransätze schnell an Grenzen. In dieser Arbeit wird eine funktionale Erweiterung des bekannten Generatorprinzips eingesetzt, die es erlaubt, Informationen aus der Layoutumgebung der Instanz in die Layoutgenerierung einzubeziehen. Mit dieser sog. kontextbasierten PCell gelingt die Automatisierung konkreter, bisher nur manuell lösbarer Probleme des Layoutentwurfs von Hochfrequenzschaltungen. Die Arbeit zeigt das Potential kontextbasierter PCells für die weitere Steigerung des Automatisierungsgrades im analogen Layoutentwurf.
This paper presents a dc–dc converter for integration in the power management unit of an ultra-low power microcontroller. The converter is designed to significantly reduce the wake-up energy and startup delay of the supplied core. The use of a minimized output capacitor is the key factor to save the wake-up energy. The converter is buffered with only 56 nF and guarantees a stable output of 1.2 V with a voltage ripple smaller than 30 mV. The controller of the proposed dc–dc converter is based on a predictive peak current control that allows the system to control the energy transfer at extremely low power consumption. The proposed circuit is implemented in 130 nm CMOS technology with an area of only 0.14 mm². It achieves a high conversion efficiency of 92.1% and a small quiescent current of 440 nA. It operates from 1.8 to 3.3 V with a maximum load of 2.65 mA.
This paper presents a wide-Vin step-down parallel-resonant converter (PRC), comprising an integrated 5-bit capacitor array and a 300-nH resonant coil, placed in parallel to a conventional buck converter. Soft-switching resonant converters are beneficial for high-Vin multi-MHz converters to reduce dominant switching losses, enabling higher switching frequencies. The output filter inductor is optimized based on an empirical study of available inductors. The study shows that faster switching significantly reduces not only the inductor value but also volume, price, and even the inductor losses. In addition, unlike conventional resonant concepts, soft-switching control as part of the proposed PRC eliminates input voltage-dependent losses over a wide operating range, resulting in 76.3% peak efficiency. At Vin = 48 V, a loss reduction of 35% is achieved compared with the conventional buck converter. Adjusting an integrated capacitor array, and selecting the number of oscillation periods, keeps the switching frequency within a narrow range. This ensures high efficiency across a wide range of Vin = 12–48 V, 100–500-mA load, and 5-V output at up to 25-MHz switching frequency. Thanks to the low output current ripple, the output capacitor can be as small
as 50 nF.
This paper presents a fully integrated gate driver in a 180-nm bipolar CMOS DMOS (BCD) technology with 1.5-A max. gate current, suitable for normally OFF gallium nitride (GaN) power switches, including gate-injection transistors (GIT). Full-bridge driver architecture provides a bipolar and three-level gate drive voltage for a robust and efficient GaN switching. The concept of high voltage energy storing (HVES), which comprises an on-chip resonant LC tank, enables a very area-efficient buffer capacitor integration and superior gatedriving speed. It reduces the component count and the influence of parasitic gate-loop inductance. Theory and calculations confirm the benefits of HVES compared to other capacitor implementation methods. The proposed gate driver delivers a gate charge of up to 11.6 nC, sufficient to drive most types of currently available GaN power transistors. Consequently, HVES enables to utilize the fast switching capabilities of GaN for advanced and compact power electronics.
Boost converters suffer from a bandwidth limitation caused by the right-half plane zero (RHPZ), which occurs in the control-to-output transfer function. In contrast, there are many applications that require superior dynamic behavior. Further, size and cost of boost converter systems can be minimized by reduced voltage deviations and fast transient responses in case of large signal load transients. The key idea of the proposed ΔV/Δt-intervention control concept is to adapt the controller output to its new steady state value immediately after a load transient by prediction from known parameters. The concept is implemented in a digital control circuit, consisting of an ASIC in a 110 nm-technology and a Xilinx Spartan-6 field programmable gate array (FPGA). In a boost converter with 3.5V input voltage, 6.3V output voltage, 1.2A load, and 500 kHz switching frequency, the output voltage deviations are 2.8x smaller, scaling down the output capacitor value by the same factor. The recovery times are 2.4x shorter in case of large signal load transients with the proposed concept. The control is widely applicable, as it supports constant switching frequencies and allows for duty cycle and inductor current limitations. It also shows various advantages compared to conventional control and to selected adaptive control concepts.
Due to their superior fast-switching performance, GaN transistors show enormous potential to enable compact power electronics in applications like renewable energy, electrical cars and home appliances by shrinking down the size of passives. However, fast switching poses challenges for the gate driver. Since GaN transistors have a low threshold voltage Vt of ~1V, an unintended driver turn-on can occur in case of a unipolar gate control as shown for a typical half-bridge in Fig. 24.2.1 (top left). This is due to coupling via the gate-drain capacitance (Miller coupling), when the low-side driver turns on, causing a peak current into the gate. This is usually tackled by applying a negative gate voltage to enhance the safety margin towards Vt, resulting in a bipolar gate-driving scheme. In many power-electronics applications GaN transistors operate in reverse conduction, carrying the inductor current during the dead time t, when the high-side and low-side switch are off (as illustrated at a high-side switch in Fig. 24.2.1, bottom left). As there is no real body diode as in silicon devices, the GaN transistor turns on in reverse operation with a voltage drop VF across the drain-source terminals (quasi-body diode behavior). As a negative gate voltage adds to VF, 63% higher reverse-conduction losses were measured for a typical GaN switch in bipolar gate-drive operation. This drawback is addressed by a three-level gate voltage (positive, 0V, negative), which at the same time provides robustness against unintended turn-on similar to the bipolar gate driver, proven in [1] for a discrete driver.
A wide-bandwidth galvanically isolated current sensing circuit with an integrated Rogowski coil in 180nm CMOS is presented. Exploiting the high-frequency properties of an optimized on-chip Rogowski coil, currents can be measured up to a bandwidth of 75 MHz. The analog sensor front-end comprises a two-stage integrator, which allows a chopper frequency below signal bandwidth, resulting in 2.2 mVrms output noise. An additional integrated Hall sensor extends the measurement range towards DC.
The level shifter and the floating gate supply for high-side transistors are a major challenge in high-voltage DCDC converters. This paper presents a high speed and power-efficient level shifter for voltages of up to 50V, suitable for both PMOS and NMOS power FETs. A switching node falling edge detection allows both, a sensitive and safe signal detection. This enables a robust operation during steep dv / dt transitions and a power consumption as low as 4.1 pJ per switching cycle, which is a reduction of more than 40% compared to prior art. An active clamping circuit prevents common mode displacement currents into the high-side supply. The level shifter is implemented in a 180nm BiCMOS technology. Measurements confirm a 50V 120MHz high-speed operation of the level shifter with a rising / falling propagation delay of 1.45 ns / 1.3 ns, respectively. The dv / dt robustness has been confirmed by measurements for transitions up to 6V/ ns.
This paper presents a digitally controlled boost converter IC for high output voltage and fast transient applications. Thus, it is well applicable in automotive and industrial environments. The 3V-to-6V input voltage, 6.3V output voltage, 1A boost converter IC is fabricated in a 180nm BCD technology. Digital control enables cost savings, advanced control concepts, and it is less parameter sensitive compared to common analog control. A 90 ns latency, 6-bit delay line ADC operates with a window concept, meeting high resolution requirements, e.g. in car battery applications. An output voltage live tracking is included for extending the ADC conversion window. A charge pump DAC provides high resolution, monotonicity, and short 128 ns conversion time. Further, a standard digital PI controller is enhanced by a simple but effective ΔV/Δt-intervention control. It results in 2.8x reduced output voltage deviations in case of load steps, scaling down the output capacitor value by the same factor.
Drei Stufen geben Sicherheit
(2018)
GaN-Transistoren bieten ein enormes Potenzial für kompakte Leistungselektronik, indem sie die Größe von passiven Bauelementen verringern. Allerdings bringt das schnelle Schalten Herausforderungen für den Gate-Treiber mit sich. Ein vollständig integrierter Treiber mit drei Spannungsstufen hilft, diese zu lösen.
Rattern nicht erwünscht
(2018)
Die Additive Fertigung bietet großes Potenzial zur Erschließung neuer, flexibler und innovativer Fertigungsprozesse mit kurzen Durchlaufzeiten. Erhöhte Komplexität und die Integration von Funktionen in Bauteile wird gefördert. Zur Steigerung der Konkurrenzfähigkeit und weiteren Ausweitung des Einsatzgebietes sind automatisierte Fertigungsschritte nach dem Bauprozess erforderlich. Werkzeugmaschinen spielen auch in der Prozesskette der Additiven Fertigung eine zentrale Rolle bei der Erzeugung von genauen Funktionsflächen. Dabei ist evtl. eine andere Auslegung aufgrund reduzierter Zerspanvolumen und geringeren Flächen möglich.
A fully passive RFID temperature sensor SoC with an accuracy of ±0.4°C (3σ) from 0°C to 125°C
(2018)
This paper presents a fully passive 13.56 MHz RFID temperature sensor system-on-chip. Its power management unit (PMU) operates over a large temperature range using a zero temperature coefficient (TC) bias source. On-chip temperature sensing is accomplished with low voltage, low power CMOS circuitry and time-domain signal processing. Two operating modes have been defined to study supply noise sensitivity: command mode and listening mode, which represent sensor operation during RFID command transfer and listening, respectively. Besides a standard readout command, a customized serial readout command is utilized to distinguish the data from both modes. In command mode, the sensor suffers from interference from the RFID command packet and outputs interference as well, while the sensor outputs no interference in listening mode. Measurements show that sensor resolution in listening mode is improved by a factor of approximately 16 compared to command mode. The chip was fabricated in a standard 0.35 µm CMOS technology and chip-on-board mounted to a tuned RFID transponder coil on an aluminium core FRA4 PCB substrate. Real-time wireless temperature sensing has been demonstrated with a commercial HF RFID reader. With a two-point calibration, the SoC achiesves a 3σ sensing accuracy of ±0.4°C from 0° C to 125° C.
Coupling electricity and heat sector is one of the most necessary actions for the successful energy transition. Efficient electrification for space heating and domestic hot water generation is needed for buildings, which are not connected to any district heating network, as distributed heating demand momentarily is largely met by fossil fuels. Hence, hybrid energy systems will play a pivotal role for the energy transition in buildings. Heat pumps running on PV-electricity is one of the most widely discussed combination for this purpose. In this paper, a heuristic optimization method for the optimal operation of a heat pump driven by the objective for maximum onsite PV electricity utilization is presented. In this context, the thermal flexibility of the building and a thermal energy storage (TES) for generation of domestic hot water (DHW) are activated in order to shift the operation of the heat pump to times of PV-generation. Yearly simulations for a system consisting of heat pump, PV modules, building with floor heating installation and TES for DHW generation are carried out. Variation parameters for the simulation include room temperature amplitude (0.5, 1, 1.5 and 2 K) based on mean room temperature (21 °C), PV-capacity (4, 6, 8 and 10 kW) and type of heat pump (ground source and air source type). The yearly energy balances show that buildings offer significant thermal storage capacity avoiding an additional, large TES for space heating fulfillment and improving the share of onsite PV electricity utilization. With introduction of a battery, which has been analyzed as well for different sizes (1.9, 4.8, 7.7 and 10.6 kWh), the share of onsite PVelectricity utilization can even be improved. However, thermal flexibility supplemented by the varying room temperature amplitude for a bigger battery does not improve the share of onsite PV-electricity utilization. Nevertheless, even with a battery not more than 50% of the electrical load including operation of the heat pump can be covered by PV-electricity for the specific system under investigation. This is noteworthy on the one hand, since it indicates that a hybrid heating system consisting of heat pump and PV cannot solely cover the heat demand of residential buildings. One the other hand, this emphasizes the necessity to include further renewable sources like wind power, in order to draw the complete picture. This, however, is beyond the scope of this paper, which mainly focuses on introduction and verification of the novel control method with regard to a practical building.
Micro grids often consist of energy generators, storages and consumers with controllers which are not prepared for their integration into communication networks for energy systems. In this paper it will be presented, how standards from the field of energy automation can be applied in such controllers. The data for communication interfaces can be structured according to the IEC 61850- or the VHPREADY standard. It is investigated which requirements must be supported to implement such data models within the controllers. For the transmission of the data we propose the OPC UA protocol, which supports extensive security measures and which is today available for nearly all modern types of controllers and computers.
One of strategically important issues of energy security of Ukraine and the countries of Europe today is to reduce the consumption of natural gas. This task is particularly relevant in winter, when a significant amount of natural gas is consumed for heating premises. Therefore, one can predict that in the nearest future, in Ukraine and European countries, premises will be heated more frequently by electrical energy.
A massive transition to electric heating of premises under conditions of the implementation of national objective in Ukraine and the countries of Europe related to a significant reduction in energy consumption necessitates to rethink the process of control over electric heating of premises. It is required that the algorithms that control power supply to premises should include mechanisms for planning the amount of electric energy consumed by an individual. This is especially true of such energy-intensive processes like heating the premises.
Therefore, it is an important task for Ukraine and the countries of Europe to work out an approach for creating systems to control electric heating of premises in a house or apartment that would take into consideration not only information about the desired temperature regime, but also information on the desired amount of electricity needed for heating.
The maintenance issue of batteries and the limited power level of energy harvesting is addressed by the presented integrated micropower supply. Connected to the 120/230-VRMS mains, it provides a 3.3-V ac output voltage, suitable for applications such as the Internet-of Things and smart homes. The micropower supply consists of a fully integrated ac–dc and dc–dc converter with one external low-voltage surface mount device buffer capacitor, resulting in an extremely compact size. Fabricated in a low-cost 0.35-μm 700-V complimentary metal-oxide-semiconductor technology, it covers a die size of 7.7 mm². The ac–dc converter is a direct coupled, full-wave rectifier with a subsequent series regulator. The dc–dc stage is a fully integrated capacitive 4:1 converter with up to 17-V input and 47.4% peak efficiency. The power supply comprises several high-voltage control circuits including level shifters and various types of charge pumps (CPs). A source supplied CP is utilized that supports a varying switching node potential. The overall losses are discussed and optimized, including flying capacitor bottom-plate losses. The power supply achieves an output power of 3 mW, resulting in a power density of 390 μW/mm². This exceeds prior art by a factor of 11.