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The experimental characterization of the thermal impedance Zth of large power MOSFETs is commonly done by measuring the junction temperature Tj in the cooling phase after the device has been heated, preferably to a high junction temperature for increased accuracy. However, turning off a large heating current (as required by modern MOSFETs with low on-state resistances) takes some time because of parasitic inductances in the measurement system. Thus, most setups do not allow the characterization of the junction temperature in the time range below several tens of μs.
In this paper, an optimized measurement setup is presented which allows accurate Tj characterization already 3 μs after turn-off of heating. With this, it becomes possible to experimentally investigate the influence of thermal capacitances close to the active region of the device. Measurement results will be presented for advanced power MOSFETs with very large heating currents up to 220 A. Three bonding variants are investigated and the observed differences will be explained.
In this work, a comparison between different brushless harmonic-excited wound-rotor synchronous machines is performed. The general idea of all topologies is the elimination of the slip rings and auxiliary windings by using the already existing stator and rotor winding for field excitation. This is achieved by injecting a harmonic airgap field with the help of power electronics. This harmonic field does not interact with the fundamental field, it just transfers the excitation power across the airgap. Alternative methods with varying number of phases, different pole-pair combinations, and winding layouts are covered and compared with a detailed Finite-Element-parameterized model. Parasitic effects due to saturation and coupling between the harmonic and main windings are considered.
We present a compact battery charger topology for weight and cost sensitive applications with an average output current of 9A targeted for 36V batteries commonly found in electric bicycles. Instead of using a conventional boost converter with large DC-link capacitors, we accomplish PFC-functionality by shaping the charging current into a sin²-shape. In addition, a novel control scheme without input-current sensing is introduced. A-priori knowledge is used to implement a feed-forward control in combination with a closed-loop output current control to maintain the target current. The use of a full-bridge/half bridge LLC converter enables operation in a wide input-voltage range.
A fully featured prototype has been built with a peak output power of 1050W. An average output power of 400W was measured, resulting in a power density of 1.8 kW/dm³. At 9A charging current, a power factor of 0.96 was measured and the efficiency exceeds 93% on average with passive rectification.
The impact of pulse charging has been evaluated on a 400Wh battery which was charged with the proposed converter as well as CC-CV-charging for reference. Both charging schemes show similar battery surface temperatures.
In this work we investigate the behavior of MIS- and Schottky-gate AlGaN/GaN HEMTs under high-power pulsestress. A special setup capable of applying pulses of constant power is used to evaluate the electro-thermal response in different operating points. For both types of devices, the time to failure was found to decrease with increasing drain-source voltage. Overall, the Schottky-gate device displays a higher pulse robustness. The pulse withstand time of the MIS-gate device is limited by the occurrence of a thermal instability at approximately 240°C while the Schottky-gate device displays a rapid increase of the gate leakage current prior to failure. The mechanism responsible for this gate current is further investigated by static and transient temperature measurements and yielded activation energies of 0.6 eV and 0.84 eV.
The loss contribution of a 2.3kW synchronous GaN-HEMT boost converter for an input voltage of 250V and an output voltage of 500V was analyzed. A simulation model which consists of two parts is introduced. First, a physics-based model is used to determine the switching losses. Then, a system simulation is applied to calculate the losses of the specific elements. This approach allows a fast and accurate system evaluation as required for further system optimization.
In this work, a hard- and a zero-voltage turn-on switching converter are compared. Measurements were performed to verify the simulation model, showing a good agreement. A peak efficiency of 99% was achieved for an output power of 1.4kW. Even with an output power above 400W, it was possible to obtain a system efficiency exceeding 98 %.
This paper presents a control strategy for optimal utilization of photovoltaic (PV) generated power in conjunction with an Energy Storage System (ESS). The ESS is specifically designed to be retrofitted into existing PV systems in an end-user application. It can be attached in parallel to the PV system and connects to existing DC/AC inverters. In particular, the study covers the impact such a modification has on the output power of existing PV panels. A distinct degradation of PV output power was found due to the different power characteristics of PV panel and ESS. To overcome such degradation a novel feedback system is proposed. The feedback system continuously modifies the power characteristic of the ESS to match the PV panel and thus achieves optimal power utilization. Impact on PV and power point tracking performance is analyzed. Simulation of the proposed system is performed in MATLAB/Simulink. The results are found to be satisfactory.
Novel design for a coreless printed circuit board transformer realizing high bandwidth and coupling
(2019)
Rogowski coils offer galvanic isolation and can measure alternating currents with a high bandwidth. Coreless printed circuit board (PCB) transformers have been used as an alternative to limit the additional stray inductance if a Rogowski coil can not be attached to the circuit. A new PCB transformer layout is proposed to reduce cost, decrease additional stray inductance, increase the bandwidth of current measurements and simplify the integration into existing designs.
Influence of metallization layout on aging detector lifetime under cyclic thermo-mechanical stress
(2016)
The influence of the layout on early warning detectors in BCD technologies for metallization failure under cyclic thermo-mechanical stress was investigated. Different LDMOS transistors, with narrow or wide metal fingers and with or without embedded detectors, were used. The test structures were repeatedly stressed by pronounced self-heating until failure (a short circuit) was detected. The results show that the layout of the on-chip metallization has a large impact on the lifetime. A significant influence of the detectors on the lifetime was also observed, in our case causing a reduction of more than a factor of two, but only for the test structure with narrow metal fingers. The experimental results are explained by an efficient numerical thermo mechanical simulation approach, giving detailed insights into the strain distribution in the metal system. These results are important for aging detector design and, morever, for LDMOS on-chip metal layout in general.
Improved inductive feed-forward for fast turn-on of power semiconductors during hard switching
(2019)
A transformer is used to increase the gate voltage during turn-on, thus reducing the necessary bias voltage of the gate driver. Counteracting the voltage dependency of the gate capacitance of high-voltage power devices, faster transitions are possible. The additional transformer only slighly increases the over-voltage during turn-off.
The Dual Active Bridge (DAB) is a very promising topology for future power converters. However, careless operation can lead to a DC component in the transformer current. The problem is further exacerbated when the phase shift changes during operation. This work presents a study of DC bias effects on the DAB with special regard to transient effects introduced by sudden shifts in the output load. We present a simple yet effective approach to avoid DC bias entirely.
In this work, a brushless, harmonic-excited wound-rotor synchronous machine is investigated which utilizes special stator and rotor windings. The windings magnetically decouple the fundamental torque-producing field from the harmonic field required for the inductive power transfer to the field coil. In contrast to conventional harmonic-excited synchronous machines, the whole winding is utilized for both torque production and harmonic excitation such that no additional copper for auxiliary windings is needed. Different rotor topologies using rotating power electronic components are investigated and their efficiencies have been compared based on Finite-Element calculation and circuit analysis.
This work investigates the electro-thermal behavior and failure mechanism of a 600V depletion-mode GaN HEMT by experimental analysis and numerical thermal simulations. For this device, the positive temperature coefficient of the draingate leakage current can lead to the formation of hot spots. This localized thermal runaway which ultimately results in a breakdown of the inherent drain-gate junction is found to be the dominant cause of failure.
In this work, a brushless, harmonic-excited wound-rotor synchronous machine without any auxiliary windings which can provide full torque at startup is investigated experimentally. The excitation power is transferred inductively by superimposing an additional harmonic field of different pole-pair number on top of the airgap field. This is achieved by feeding the parallel paths of the stator and rotor winding separately. A prototype for the harmonic-excited synchronous machine has been constructed and experimental results are presented to verify the concept. The main loss contributors are identified and the importance of considering core losses under harmonic excitation is discussed. A general analytical model for harmonic excited synchronous machines is proposed which enables a quick estimation of the iron core flux densities and the core losses generated by the additional harmonic currents.
The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future power semiconductor devices. A lower boundary of the die size can be obtained from the thermal impedance required to withstand the high power dissipation during a short-circuit event. However, this implies that the power distribution is homogeneous and that no current filamentation has to be considered. Therefore, this work investigates this assumption by evaluating the stability of a SiC-MOSFET over a wide range of operation conditions by measurements up to destruction, thermal simulations, and high-temperature characterization.
Large power semiconductors are complex structures, their metallization usually containing many thousands of contacts or vias. Because of this, detailed FEM simulations of the whole device are nowadays not possible because of excessive simulation time.
This paper introduces a simulation approach which allows quick identification of critical regions with respect to lifetime by a simplified simulation. For this, the complex layers are replaced by a much simpler equivalent layer, allowing a simulation of the whole device even including its package. In a second step, precise simulations taking all details of the structure into account are carried out, but only for the critical regions of interest. Thus, this approach gives detailed results where required with consideration of the whole structure including packaging. Further, the simulation time requirements are very moderate.