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This paper introduces a novel placement methodology for a common-centroid (CC) pattern generator. It can be applied to various integrated circuit (IC) elements, such as transistors, capacitors, diodes, and resistors. The proposed method consists of a constructive algorithm which generates an initial, close to the optimum, solution, and an iterative algorithm which is used subsequently, if the output of constructive algorithm does not satisfy the desired criteria. The outcome of this work is an automatic CC placement algorithm for IC element arrays. Additionally, the paper presents a method for the CC arrangement evaluation. It allows for evaluating the quality of an array, and a comparison of different placement methods.
The hotspot detection has received much attention in the recent years due to a substantial mismatch between lithography wavelength and semiconductor technology feature size. This mismatch causes diffraction when transferring the layout from design onto a silicon wafer. As a result, open or short circuits (i.e. lithography hotspots) are more likely to be produced. Additionally, increasing numbers of semiconductors devices on a wafer required more time for the lithography hotspot detection analysis. In this work, we propose a fast and accurate solution based on novel artificial neural network (ANN) architecture for precise lithography hotspot detection using a convolution neural network (CNN) adopting a state of-the-art technique. The experimental results showed that the proposed model gained accuracy improvement over current state-of-theart approaches. The final code has been made publicly available.
A generic, knowledge-based method for automatic topology selection of analog circuits in a predefined analog reuse library is presented in this paper on the OTA (Operational Transconductance Amplifier) example. Analog circuits of a given circuit class are classified in a topology tree, where each node represents a specific topology. Child nodes evolve from their parent nodes by an enhancement of the parent node’s topological structure. Topology selection is performed by a depth first-search in the topology tree starting at the root node, thus checking topologies of increasing complexity. The decisions at each node are based on solving equations or – if this is not possible – on simulations. The search ends at the first (and thus the simplest) topology which can meet the specification after an adequate circuit sizing. The advantages of the generic, tree based topology selection method presented in this paper are shown in comparison to a pool selection method and to heuristic approaches. The selection is based on an accomplished chip investigation.
We present a new methodology for automatic selection and sizing of analog circuits demonstrated on the OTA circuit class. The methodology consists of two steps: a generic topology selection method supported by a “part-sizing” process and subsequent final sizing. The circuit topologies provided by a reuse library are classified in a topology tree. The appropriate topology is selected by traversing the topology tree starting at the root node. The decision at each node is gained from the result of the part-sizing, which is in fact a node-specific set of simulations. The final sizing is a simulation-based optimization. We significantly reduce the overall simulation effort compared to a classical simulation-based optimization by combining the topology selection with the part-sizing process in the selection loop. The result is an interactive user friendly system, which eases the analog designer’s work significantly when compared to typical industrial practice in analog circuit design. The topology selection method and sizing process are implemented as a tool into a typical analog design environment. The design productivity improvement achievable by our method is shown by a comparison to other design automation approaches.
Optimization-based design automation for analog ICs still remains behind the demands. A promising alternative is given by procedural approaches such as parameterized generators, also known as PCells. We are working on a complete analog design flow based on parameterized generators for entire circuits and corresponding layout modules. Because the conventional programming of such enhanced generators is far too complicated and costly, new methods are needed to ease their development. This paper presents gPCDS (graphical PCDS), a novel tool for a designer-oriented development of schematic module generators, integrated into a common schematic entry environment. The tool is based on PCDS (Parameterized Circuit Description Scheme), a meta-language for the creation of parametrized analog circuits. Schematic module generators are a very desirable complement to layout module generators in order to achieve a seamless schematic- driven layout design flow on module level. By facilitating a way of generator development that matches a design expert’s mentality, gPCDS contributes to close this gap in the analog design flow.
Due to the lack of sophisticated component libraries for microelectromechanical systems (MEMS), highly optimized MEMS sensors are currently designed using a polygon driven design flow. The advantage of this design flow is its accurate mechanical simulation, but it lacks a method for an efficient and accurate electrostatic analysis of parasitic effects of MEMS. In order to close this gap in the polygon-driven design flow, we present a customized electrostatic analysis flow for such MEMS devices. Our flow features a 2.5D fabrication-process simulation, which simulates the three typical MEMS fabrication steps (namely deposition of materials including topography, deep reactive-ion etching, and the release etch by vapor-phase etching) very fast and on an acceptable abstraction level. Our new 2.5D fabrication-process simulation can be combined with commercial field-solvers such as they are commonly used in the design of integrated circuits. The new process simulation enables a faster but nevertheless satisfactory analysis of the electrostatic parasitic effects, and hence simplifies the electrical optimization of MEMS.
A new method for the analysis of movement dependent parasitics in full custom designed MEMS sensors
(2017)
Due to the lack of sophisticated microelectromechanical systems (MEMS) component libraries, highly optimized MEMS sensors are currently designed using a polygon driven design flow. The strength of this design flow is the accurate mechanical simulation of the polygons by finite element (FE) modal analysis. The result of the FE-modal analysis is included in the system model together with the data of the (mechanical) static electrostatic analysis. However, the system model lacks the dynamic parasitic electrostatic effects, arising from the electric coupling between the wiring and the moving structures. In order to include these effects in the system model, we present a method which enables the quasi dynamic parasitic extraction with respect to in-plane movements of the sensor structures. The method is embedded in the polygon driven MEMS design flow using standard EDA tools. In order to take the influences of the fabrication process into account, such as etching process variations, the method combines the FE-modal analysis and the fabrication process simulation data. This enables the analysis of dynamic changing electrostatic parasitic effects with respect to movements of the mechanical structures. Additionally, the result can be included into the system model allowing the simulation of positive feedback of the electrostatic parasitic effects to the mechanical structures.
In contrast to IC design, MEMS design still lacks sophisticated component libraries. Therefore, the physical design of MEMS sensors is mostly done by simply drawing polygons. Hence, the sensor structure is only given as plain graphic data which hinders the identification and investigation of topology elements such as spring, anchor, mass and electrodes. In order to solve this problem, we present a rule-based recognition algorithm which identifies the architecture and the topology elements of a MEMS sensor. In addition to graphic data, the algorithm makes use of only a few marking layers, as well as net and technology information. Our approach enables RC-extraction with commercial field solvers and a subsequent synthesis of the sensor circuit. The mapping of the extracted RC-values to the topology elements of the sensor enables a detailed analysis and optimization of actual MEMS sensors.
Nowadays, the demand for a MEMS development/design kit (MDK) is even more in focus than ever before. In order to achieve a high quality and cost effectiveness in the development process for automotive and consumer applications, an advanced design flow for the MEMS (micro electro mechanical systems) element is urgently required. In this paper, such a development methodology and flow for parasitic extraction of active semiconductor devices is presented. The methodology considers geometrical extraction and links the electrically active pn junctions to SPICE standard library models and subsequently extracts the netlist. An example for a typical pressure sensor is presented and discussed. Finally, the results of the parasitic extraction are compared with fabricated devices in terms of accuracy and capability.
Equations for fast and exact calculation of a simple model for heat transfer from a bond wire to a cylindrical finite mold package including nonideal heat transfer from wire to mold are presented. These allow for a characterization of an arbitrary mold/bond wire combination. The real mold geometry is approximated using the mold model cylinder radius and the thermal contact conductance of the mold/bond wire interface. For changes in bond and mold material, wire length, diameter, and current transient profiles, the resulting temperature transients can then be predicted. As the method is based on numerical integration of differential equations, arbitrary pulse shapes, which are industrially relevant, can be calculated. Very high thermal contact conductance values (above 40 000 W/m2K heat transfer) have been detected in real package/bond systems. The method was validated by successful comparison with finite element method simulations and alternative calculation methods and measurements.