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An experimental study of a zero voltage switching SiC boost converter with an active snubber network
(2015)
This paper presents a quasi-resonant, zero voltage switching (ZVS) SiC boost converter for an output power of up to 10 kW. The converter is realized with an easily controllable active snubber network that allows a reduction of switching losses by minimizing the voltage stress applied to the active switch. With this approach, an increase of the switching frequency is possible, allowing a reduction of the system size. Experiments show a maximum converter efficiency up to 99.2% for a switching frequency of 100 kHz. A second version of the converter enables a further size reduction by increasing the switching frequency to 300 kHz while still reaching a high efficiency up to 98.4 %.
This paper addresses the turn-on switching process of insulated-gate bipolar transistor (IGBT) modules with anti-parallel free-wheeling diodes (FWD) used in inductive load switching power applications. An increase in efficiency, i.e. decrease in switching losses, calls for a fast switching process of the IGBT, but this commonly implies high values of the reverse-recovery current overshoot. To overcome this undesired behaviour, a solution was proposed which achieves an independent control of the collector current slope and peak reverse recovery current by applying a gate current that is briefly turned negative during the turn-on process. The feasibility of this approach has already been shown, however, a sophisticated control method is required for applying it in applications with varying currents, temperature and device parameters. In this paper a solution based on an adaptive, iterative closed-loop ontrol is proposed. Its effectiveness is demonstrated by experimental results from a 1200 V/200A IGBT power module for different load currents and reverse-recovery current overshoots.
A novel gate driving approach to balance the transient current of parallel-connected GaN-HEMTs
(2018)
To enable higher current handling capability of GaN-based DC/DC converters, devices have to be used in parallel. However, their switching times differ, especially if their threshold voltages are not identical, which causes unbalanced device current. This paper focuses on the homogeneous distribution of turn-on switching losses of GaN-HEMTs connected in parallel. By applying a new gate driver concept, the transient current is distributed evenly. The effectiveness of this concept is demonstrated by double pulse measurements, for switching currents up to 45A and a voltage of 400V. A uniform current distribution is achieved, including a reduction of the turn-on losses by 50% compared to a conventional setup.