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On-chip metallization, especially in modern integrated BCD technologies, is often subject to high current densities and pronounced temperature cycles due to heat dissipation from power switches like LDMOS transistors. This paper continues the work on a sensor concept where small sense lines are embedded in the metallization layers above the active area of a switching LDMOS transistor. The sensors show a significant resistance change that correlates with the number of power cycles. Furthermore, influences of sense line layer, geometry and the dissipated energy are shown. In this paper, the focus lies on a more detailed analysis of the observed change in sense line resistance.
Die vorliegende Erfindung betrifft ein Transmission Line Pulssystem zum Erzeugen eines elektrischen Pulses, sowie ein diesbezügliches Verfahren. Dabei umfasst das Transmission Line Pulssystem: eine Transmission Line, eine Energieversorgungsquelle zum Aufladen der Transmission Line und einen Entladungsschalter zum Auslösen einer Entladung der aufgeladenen Transmission Line, dadurch gekennzeichnet, dass die Transmission Line eine Vielzahl von Einzelsegmenten umfasst, wobei jedes Einzelsegment über ein zugehöriges Einstellglied mit einem gemeinsamen Massepotential elektrisch verbunden ist, und wobei zumindest eines der Einstellglieder einen Einstellkondensator und einen Einstellschalter aufweist.
IGBT modules with anti-parallel FWDs are widely used in inductive load switching power applications, such as motor drive applications. Nowadays there is a continuous effort to increase the efficiency of such systems by decreasing their switching losses. This paper addresses the problems arising in the turn-on process of an IGBT working in hard-switching conditions. A method is proposed which achieves – contrary to most other approaches – a high switching speed and, at the same time, a low peak reverse-recovery current. This is done by applying an improved gate current waveform that is briefly lowered during the turn-on process. The proposed method achieves low switching losses. Its effectiveness is demonstrated by experimental results with IGBT modules for 600V and 1200V.
An improved gate drive circuit is provided for a power device, such as a transistor. Tue gate driver circuit may in -clude: a current control circuit; a first secondary current source that is used to control the switching transient during turn off of the power transistor and a second secondary current source that is used to control the switching transient during turn on of the power transistor. In operation, the current control circuit operates, during turn on ofthe power transistor, to source a gate drive current to a control node ofthe power transistor and, during turn off ofthe power transistor, to sink a gate drive current from the control node of the power transistor. The first and second secondary current sources adjust the gate drive current to control the voltage or current rate of change and thereby the overshoot during the switching transient.