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Silicon neurons represent different levels of biological details and accuracies as a trade-off between complexity and power consumption. With respect to this trade-off and high similarity to neuron behaviour models, relaxation-type oscillator circuits often yield a good compromise to emulate neurons. In this chapter, two exemplified relaxation-type silicon neurons are presented that emulate neural behaviour with energy consumption under the scale of nJ/spike. The first proposed fully CMOS relaxation SiN is based on mathematical Izhikevich model and can mimic a broad range of physiologically observable spike patterns. The results of kinds of biologically plausible output patterns and coupling process of two SiNs are presented in 0.35 μm CMOS technology. The second type is a novel ultra-low-frequency hybrid CMOS-memristive SiN based on relaxation oscillators and analog memristive devices. The hybrid SiN directly emulates neuron behaviour in the range of physiological spiking frequencies (less than 100 Hz). The relaxation oscillator is implemented and fabricated in 0.13 μm CMOS technology. An autonomous neuronal synchronization process is demonstrated with two relaxation oscillators coupled by an analog memristive device in the measurement to emulate the synchronous behaviour between spiking neurons.
We present the results of an extensive characterization of the performance and stability of a third-order continuous-time delta-sigma modulator with active coefficient error compensation. Using our previously published coefficient tuning technique, process variation induced R-C time-constant (TC) errors in the forward signal path can be compensated indirectly using continuously tunable DACs in the feedback path. To validate our technique experimentally with a range of real TC variations, we designed a modulator with discretely configurable integration capacitor arrays in a 0.35-μm CMOS process. We configured the capacitors of the fabricated device for a range of total TC variations from -28.4 % to +19.3 % and measured the signal-to-noise ratio (SNR) as a function of the input amplitude before and after compensating the variations electrically using the feedback DACs. The results show that our tuning technique is capable of restoring the desired nominal modulator performance over the entire parameter variation range, including the system’s nominal maximum stable amplitude (MSA).
Modern wide bandgap power devices promise higher power conversion performance if the device can be operated reliably. As switching speed increases, the effects of parasitic ringing become more prominent, causing potentially damaging overvoltages during device turn-off. Estimating the expected additional voltage caused by such ringing enables more reliable designs. In this paper, we present an analytical expression to calculate the expected overvoltage caused by parasitic ringing based on parasitic element values and operating point parameters. Simulations and measurements confirm that the expression can be used to find the smallest rise time of the switches’ drain-source voltage for minimum overvoltage. The given expression also allows the prediction of the trade off overvoltage amplitude in case of faster required rise times.