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Electromigration (EM) is becoming a progressively severe reliability challenge due to increased interconnect current densities. A shift from traditional (post-layout) EM verification to robust (pro-active) EM aware design - where the circuit layout is designed with individual EM-robust solutions - is urgently needed. This tutorial will give an overview of EM and its effects on the reliability of present and future integrated circuits (ICs). We introduce the physical EM process and present its specific characteristics that can be affected during physical design. Examples of EM countermeasures which are applied in today’s commercial design flows are presented. We show how to improve the EM-robustness of metallization patterns and we also consider mission proiles to obtain application-oriented current density limits. The increasing interaction of EM with thermal migration is investigated as well. We conclude with a discussion of application examples to shift from the current post layout EM verification towards an EM aware physical design process. Its methodologies, such as EM-aware routing, increase the EM-robustness of the layout with the overall goal of reducing the negative impact of EM on the circuit’s reliability.
This paper introduces a novel placement methodology for a common-centroid (CC) pattern generator. It can be applied to various integrated circuit (IC) elements, such as transistors, capacitors, diodes, and resistors. The proposed method consists of a constructive algorithm which generates an initial, close to the optimum, solution, and an iterative algorithm which is used subsequently, if the output of constructive algorithm does not satisfy the desired criteria. The outcome of this work is an automatic CC placement algorithm for IC element arrays. Additionally, the paper presents a method for the CC arrangement evaluation. It allows for evaluating the quality of an array, and a comparison of different placement methods.
The hotspot detection has received much attention in the recent years due to a substantial mismatch between lithography wavelength and semiconductor technology feature size. This mismatch causes diffraction when transferring the layout from design onto a silicon wafer. As a result, open or short circuits (i.e. lithography hotspots) are more likely to be produced. Additionally, increasing numbers of semiconductors devices on a wafer required more time for the lithography hotspot detection analysis. In this work, we propose a fast and accurate solution based on novel artificial neural network (ANN) architecture for precise lithography hotspot detection using a convolution neural network (CNN) adopting a state of-the-art technique. The experimental results showed that the proposed model gained accuracy improvement over current state-of-theart approaches. The final code has been made publicly available.
Lithographical hotspot (LH) detection using deep learning (DL) has received much attention in the recent years. It happens mainly due to the facts the DL approach leads to a better accuracy over the traditional, state-of-the-art programming approaches. The purpose of ths study is to compare existing data augmentation (DA) techniques for the integrated circuit (IC) mask data using DL methods. DA is a method which refers to the process of creating new samples similar to the training set, thereby helping to reduce the gap between classes as well as improving the performance of the DL system. Experimental results suggest that the DA methods increase overall DL models performance for the hotspot detection tasks.
A generic, knowledge-based method for automatic topology selection of analog circuits in a predefined analog reuse library is presented in this paper on the OTA (Operational Transconductance Amplifier) example. Analog circuits of a given circuit class are classified in a topology tree, where each node represents a specific topology. Child nodes evolve from their parent nodes by an enhancement of the parent node’s topological structure. Topology selection is performed by a depth first-search in the topology tree starting at the root node, thus checking topologies of increasing complexity. The decisions at each node are based on solving equations or – if this is not possible – on simulations. The search ends at the first (and thus the simplest) topology which can meet the specification after an adequate circuit sizing. The advantages of the generic, tree based topology selection method presented in this paper are shown in comparison to a pool selection method and to heuristic approaches. The selection is based on an accomplished chip investigation.
We present a new methodology for automatic selection and sizing of analog circuits demonstrated on the OTA circuit class. The methodology consists of two steps: a generic topology selection method supported by a “part-sizing” process and subsequent final sizing. The circuit topologies provided by a reuse library are classified in a topology tree. The appropriate topology is selected by traversing the topology tree starting at the root node. The decision at each node is gained from the result of the part-sizing, which is in fact a node-specific set of simulations. The final sizing is a simulation-based optimization. We significantly reduce the overall simulation effort compared to a classical simulation-based optimization by combining the topology selection with the part-sizing process in the selection loop. The result is an interactive user friendly system, which eases the analog designer’s work significantly when compared to typical industrial practice in analog circuit design. The topology selection method and sizing process are implemented as a tool into a typical analog design environment. The design productivity improvement achievable by our method is shown by a comparison to other design automation approaches.
Optimization-based design automation for analog ICs still remains behind the demands. A promising alternative is given by procedural approaches such as parameterized generators, also known as PCells. We are working on a complete analog design flow based on parameterized generators for entire circuits and corresponding layout modules. Because the conventional programming of such enhanced generators is far too complicated and costly, new methods are needed to ease their development. This paper presents gPCDS (graphical PCDS), a novel tool for a designer-oriented development of schematic module generators, integrated into a common schematic entry environment. The tool is based on PCDS (Parameterized Circuit Description Scheme), a meta-language for the creation of parametrized analog circuits. Schematic module generators are a very desirable complement to layout module generators in order to achieve a seamless schematic- driven layout design flow on module level. By facilitating a way of generator development that matches a design expert’s mentality, gPCDS contributes to close this gap in the analog design flow.
Due to the lack of sophisticated component libraries for microelectromechanical systems (MEMS), highly optimized MEMS sensors are currently designed using a polygon driven design flow. The advantage of this design flow is its accurate mechanical simulation, but it lacks a method for analyzing the dynamic parasitic electrostatic effects arising from the electric coupling between (stationary) wiring and structures in motion. In order to close this gap, we present a method that enables the parasitics arising from in-plane, sensor-structure motion to be extracted quasi-dynamically. With the method's structural-recognition feature we can analyze and optimize dynamic parasitic electrostatic effects.
Due to the lack of sophisticated component libraries for microelectromechanical systems (MEMS), highly optimized MEMS sensors are currently designed using a polygon driven design flow. The advantage of this design flow is its accurate mechanical simulation, but it lacks a method for an efficient and accurate electrostatic analysis of parasitic effects of MEMS. In order to close this gap in the polygon-driven design flow, we present a customized electrostatic analysis flow for such MEMS devices. Our flow features a 2.5D fabrication-process simulation, which simulates the three typical MEMS fabrication steps (namely deposition of materials including topography, deep reactive-ion etching, and the release etch by vapor-phase etching) very fast and on an acceptable abstraction level. Our new 2.5D fabrication-process simulation can be combined with commercial field-solvers such as they are commonly used in the design of integrated circuits. The new process simulation enables a faster but nevertheless satisfactory analysis of the electrostatic parasitic effects, and hence simplifies the electrical optimization of MEMS.
A new method for the analysis of movement dependent parasitics in full custom designed MEMS sensors
(2017)
Due to the lack of sophisticated microelectromechanical systems (MEMS) component libraries, highly optimized MEMS sensors are currently designed using a polygon driven design flow. The strength of this design flow is the accurate mechanical simulation of the polygons by finite element (FE) modal analysis. The result of the FE-modal analysis is included in the system model together with the data of the (mechanical) static electrostatic analysis. However, the system model lacks the dynamic parasitic electrostatic effects, arising from the electric coupling between the wiring and the moving structures. In order to include these effects in the system model, we present a method which enables the quasi dynamic parasitic extraction with respect to in-plane movements of the sensor structures. The method is embedded in the polygon driven MEMS design flow using standard EDA tools. In order to take the influences of the fabrication process into account, such as etching process variations, the method combines the FE-modal analysis and the fabrication process simulation data. This enables the analysis of dynamic changing electrostatic parasitic effects with respect to movements of the mechanical structures. Additionally, the result can be included into the system model allowing the simulation of positive feedback of the electrostatic parasitic effects to the mechanical structures.