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Energy capability improvement of power DMOS transistors operating in pulsed conditions

  • Modern power DMOS transistors greatly benefit from the continuous advances of the technology, which yield devices with very low area-specific RDS,on figures of merit and therefore allow for significantly reduced active areas. However, in many applications, where the devices must dissipate high amounts of energy and thus are subjected to significant self-heating, the active area is not dictated by RDS,on requirements, but by the energy constraints. In this paper, a simple method of improving the energy capability and reliability of power DMOS transistors operating in pulsed conditions is proposed and experimentally verified. The method consists in redistributing the power density from the hotter to the cooler device regions, hence achieving a more homogeneous temperature distribution and a reduced peak temperature. To demonstrate the principle, a simple gate offset circuit is used to redistribute the current density to the cooler DMOS parts. No technology changes are needed for the implementation, only minor changes to the driver circuit are necessary, with a minimal impact on the additional required active area. Improvements in the energy capability from 9.2% up to 39% have been measured. Furthermore, measurements have shown that the method remains effective also if the operating conditions change significantly. The simplicity and the effectiveness of the implementation makes the proposed method suitable to be used in a wide range of applications.

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Author of HS ReutlingenPfost, Martin
Erschienen in:Solid-state electronics
Place of publication:Amsterdam
Document Type:Journal article
Publication year:2015
Tag:DMOS transistor; energy capability; power MOSFETs; self-heating; temperature
Page Number:7
First Page:140
Last Page:146
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt