A gate driver approach enabling switching loss reduction for hard-switching applications
- A gate driver approach is presented for the reduction of turn-on losses in hard switching applications. A significant turn-on loss reduction of up to 55% has been observed for SiCMOSFETs. The gate driver approach uses a transformer which couples energy from the power path back into the gate path during switching events, providing increased gate driver current and thereby faster switching speed. The gate driver approach was tested on a boost converter running at a switching frequency up to 300 kHz. With an input voltage of 300V and an output voltage of 600V, it was possible to reduce the converter losses by 8% at full load. Moreover, the output power range could be extended by 23% (from 2.75kW to 3.4 kW) due to the reduction of the turn-on losses.
| Author of HS Reutlingen | Ebli, Michael; Wattenberg, Martin; Pfost, Martin |
|---|---|
| DOI: | https://doi.org/10.1109/PEDS.2017.8289133 |
| ISBN: | 978-1-5090-2364-6 |
| Erschienen in: | 2017 IEEE 12th International Conference on Power Electronics and Drive Systems (IEEE PEDS 2017) : Hawaii Convention Center, Honolulu, Hawaii, USA, 12-15 December 2017 |
| Publisher: | IEEE |
| Place of publication: | Piscataway, NJ |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2017 |
| Page Number: | 4 |
| First Page: | 968 |
| Last Page: | 971 |
| DDC classes: | 620 Ingenieurwissenschaften und Maschinenbau |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
