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Reconstructing 3D face shape from a single 2D photograph as well as from video is an inherently ill-posed problem with many ambiguities. One way to solve some of the ambiguities is using a 3D face model to aid the task. 3D morphable face models (3DMMs) are amongst the state of the art methods for 3D face reconstruction, or so called 3D model fitting. However, current existing methods have severe limitations, and most of them have not been trialled on in-the-wild data. Current analysis-by- synthesis methods form complex non linear optimisation processes, and optimisers often get stuck in local optima. Further, most existing methods are slow, requiring in the order of minutes to process one photograph.
This thesis presents an algorithm to reconstruct 3D face shape from a single image as well as from sets of images or video frames in real-time. We introduce a solution for linear fitting of a PCA shape identity model and expression blendshapes to 2D facial landmarks. To improve the accuracy of the shape, a fast face contour fitting algorithm is introduced. These different components of the algorithm are run in iteration, resulting in a fast, linear shape-to- landmarks fitting algorithm. The algorithm, specifically designed to fit to landmarks obtained from in-the-wild images, by tackling imaging conditions that occur in in-the-wild images like facial expressions and the mismatch of 2D–3D contour correspondences, achieves the shape reconstruction accuracy of much more complex, nonlinear state of the art methods, while being multiple orders of magnitudes faster.
Second, we address the problem of fitting to sets of multiple images of the same person, as well as monocular video sequences. We extend the proposed shape-to-landmarks fitting to multiple frames by using the knowledge that all images are from the same identity. To recover facial texture, the approach uses texture from the original images, instead of employing the often-used PCA albedo model of a 3DMM. We employ an algorithm that merges texture from multiple frames in real-time based on a weighting of each triangle of the reconstructed shape mesh.
Last, we make the proposed real-time 3D morphable face model fitting algorithm available as open-source software. In contrast to ubiquitous available 2D-based face models and code, there is a general lack of software for 3D morphable face model fitting, hindering a widespread adoption. The library thus constitutes a significant contribution to the community.
The main challenge when driving heat pumps by PV-electricity is balancing differing electrical and thermal demands. In this article, a heuristic method for optimal operation of a heat pump driven by a maximum share of PV-electricity is presented. For this purpose, the (DHW) are activated in order shift the operation of the heat pump to times of PV-generation. The system under consideration refers to thermal and electrical demands of a single family house. It consists of a heat pump, a thermal energy storage for DHW and of grid connected heating and generation of domestic hot water, the heat pump runs with two different supply temperatures and thereby achieving a maximum overall COP. Within the algorithm for optimization a set of heuristic rules is developed in a way that the operational characteristics of the heat pump in terms of minimum running and stopping times are met as well as the limiting constraints of upper and lower limits of room temperature and energy content of electricity generated, a varying number of heat pump schedules fulfilling the bundary conditions are created. Finally, the schedule offering the maximum on-site utilization of PV-electricity with a minimum number of starts of the heat pump, which serves as secondary condition, is selected. Yearly simulations of this combination have been carried out. Initial results of this method indicate a significant rise in on-site consumption of the PV-electricity and heating demand fulfilment by renewable electricity with no need for a massive TES for the heating system in terms of a big water tank.
This work presents a fully integrated GaN gate driver in a 180nm HV BCD technology that utilizes high-voltage energy storing (HVES) in an on-chip resonant LC tank, without the need of any external capacitor. It delivers up to 11nC gate charge at a 5V GaN gate, which exceeds prior art by a factor of 45-83, supporting a broad range of GaN transistor types. The stacked LC tank covers an area of only 1.44mm², which corresponds to a superior value of 7.6nC/mm².
In recent years, significant progress was made on switched-capacitor DCDC converters as they enable fully integrated on chip power management. New converter topologies overcame the fixed input-to-output voltage limitation and achieved high efficiency at high power densities. SC converters are attractive to not only mobile handheld devices with small input and output voltages, but also for power conversion in IoTs, industrial and automotive applications, etc. Such applications need to be capable of handling high input voltages of more than 10V. This talk highlights the challenges of the required supporting circuits and high voltage techniques, which arise for high Vin SC converters. It includes level shifters, charge pumps and back-to-back switches. High Vin conversion is demonstrated in a 4:1 SC DCDC converter with an input voltage as high as 17V with a peak efficiency of 45 %, and a buckboost SC converter with an input voltage range starting from 2 up to 13V, which utilizes a total of 17 ratios and achieves a peak efficiency of 81.5 %. Furthermore a highly integrated micro power supply approach is introduced, which is connected directly to the 120/230 Vrms mains, with an output power of 3mW, resulting in a power density >390μW/mm², which exceeds prior art by a factor of 11.
This paper presents a control strategy for optimal utilization of photovoltaic (PV) generated power in conjunction with an Energy Storage System (ESS). The ESS is specifically designed to be retrofitted into existing PV systems in an end-user application. It can be attached in parallel to the PV system and connects to existing DC/AC inverters. In particular, the study covers the impact such a modification has on the output power of existing PV panels. A distinct degradation of PV output power was found due to the different power characteristics of PV panel and ESS. To overcome such degradation a novel feedback system is proposed. The feedback system continuously modifies the power characteristic of the ESS to match the PV panel and thus achieves optimal power utilization. Impact on PV and power point tracking performance is analyzed. Simulation of the proposed system is performed in MATLAB/Simulink. The results are found to be satisfactory.
A novel configuration of the dual active bridge (DAB) DC/DC converter is presented, enabling more efficient wide voltage range conversion at light loads. A third phase leg as well as a center tapped transformer are introduced to one side of the converter. This concept provides two different turn ratios, thus extending the zero voltage switching operation resulting in higher efficiency. A laboratory prototype was built converting an input voltage of 40V to an output voltage in the range of 350V to 650V. Measurements show a significant increase up to 20% in the efficiency for light-load operation.
Multilevel-cell (MLC) flash is commonly deployed in today’s high density NAND memories, but low latency and high reliability requirements make it barely used in automotive embedded flash applications. This paper presents a time domain voltage sensing scheme that applies a dynamic voltage ramp at the cells’ control gate (CG) in order to achieve fast and reliable sensing suitable for automotive applications.
This publication gives a short introduction and overview of the European project SCOUT and introduces a methodology for a holistic approach to record the state of the art in technical (vehicle and connectivity, human factors regarding physiologic and ergonomic level) and non-technical enablers (societal, economic, legal, regulatory and policy level) of connected and automated driving in Europe. The paper addresses beside the technical topics of environmental perception, E/E architecture, actuators and security, the state of the art of the legal framework in the context of connected and automated driving.
Gallium nitride high electron mobility transistors (GaN-HEMTs) have low capacitances and can achieve low switching losses in applications where hard turn-on is required. Low switching losses imply a fast switching; consequently, fast voltage and current transients occur. However, these transients can be limited by package and layout parasitics even for highly optimized systems. Furthermore, a fast switching requires a fast charging of the input capacitance, hence a high gate current.
In this paper, the switching speed limitations of GaN-HEMTs due to the common source inductance and the gate driver supply voltage are discussed. The turn-on behavior of a GaN-HEMT is simulated and the impact of the parasitics and the gate driver supply voltage on the switching losses is described in detail. Furthermore, measurements are performed with an optimized layout for a drain-source voltage of 500 V and a drain-source current up to 60 A.
Modern power semiconductor devices have low capacitances and can therefore achieve very fast switching transients under hard-switching conditions. However, these transients are often limited by parasitic elements, especially by the source inductance and the parasitic capacitances of the power semiconductor. These limitations cannot be compensated by conventional gate drivers. To overcome this, a novel gate driver approach for power semiconductors was developed. It uses a transformer which accelerates the switching by transferring energy from the source path to the gate path.
Experimental results of the novel gate driver approach show a turn-on energy reduction of 78% (from 80 μJ down to 17 μJ) with a drain-source voltage of 500V and a drain current of 60 A. Furthermore, the efficiency improvement is demonstrated for a hard-switching boost converter. For a switching frequency of 750 kHz with an input voltage of 230V and an output voltage of 400V, it was possible to extend the output power range by 35%(from 2.3kW to 3.1 kW), due to the reduction of the turn-on losses, therefore lowering the junction temperature of the GaN-HEMT.