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The hotspot detection has received much attention in the recent years due to a substantial mismatch between lithography wavelength and semiconductor technology feature size. This mismatch causes diffraction when transferring the layout from design onto a silicon wafer. As a result, open or short circuits (i.e. lithography hotspots) are more likely to be produced. Additionally, increasing numbers of semiconductors devices on a wafer required more time for the lithography hotspot detection analysis. In this work, we propose a fast and accurate solution based on novel artificial neural network (ANN) architecture for precise lithography hotspot detection using a convolution neural network (CNN) adopting a state of-the-art technique. The experimental results showed that the proposed model gained accuracy improvement over current state-of-theart approaches. The final code has been made publicly available.