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A concept for a slope shaping gate driver IC is proposed, used to establish control over the slew rates of current and voltage during the turn-on and turn off switching transients.
It combines the high speed and linearity of a fully-integrated closed-loop analog gate driver, which is able to perform real-time regulation, with the advantages of digital control, like flexibility and parameter independency, operating in a predictive cycle-bycycle regulation. In this work, the analog gate drive integrated circuit is partitioned into functional blocks and modeled in the small-signal domain, which also includes the non-linearity of parameters. An analytical stability analysis has been performed in order to ensure full functionality of the system controlling a modern generation IGBT and a superjunction MOSFET. Major parameters of influence, such as gate resistor and summing node capacitance, are investigated to achieve stable control. The large-signal behavior, investigated by simulations of a transistor level design, verifies the correct operation of the circuit. Hence, the gate driver can be designed for robust operation.
In a digitally controlled slope shaping system, reliable detection of both voltage and current slope is required to enable a closed-loop control for various power switches independent of system parameters. In most state-of-the-art works, this is realized by monitoring the absolute voltage and current values. Better accuracy at lower DC power loss is achieved by sensing techniques for a reliable passive detection, which is achieved through avoiding DC paths from the high voltage network into the sensing network. Using a high-speed analog-to-digital converter, the whole waveform of the transient derivative can be stored digitally and prepared for a predictive cycle-by-cycle regulation, without requiring high-precision digital differentiation algorithms. To gain an accurate representation of the voltage and current derivative waveforms, system parasitics are investigated and classified in three sections: (1) component parasitics, which are identified by s-parameter measurements and extraction of equivalent circuit models, (2) PCB design issues related to the sensing circuit, and (3) interconnections between adjacent boards.
The contribution of this paper is an optimized sensing network on the basis of the experimental study supporting fast transition slopes up to 100 V/ns and 1 A/ns and beyond, making the sensing technique attractive for slope shaping of fast switching devices like modern generation IGBTs, CoolMOSTM and SiC mosfets. Measurements of the optimized dv/dt and di/dt setups are demonstrated for a hard switched IGBT power stage.
LDMOS transistors in integrated power technologies are often subject to thermo-mechanical stress, which degrades the on-chip metallization and eventually leads to a short. This paper investigates small sense lines embedded in the LDMOS metallization. It will be shown that their resistance depends strongly on the stress cycle number. Thus, they can be used as aging sensors and predict impending failures. Different test structures have been investigated to identify promising layout configurations. Such sensors are key components for resilient systems that adaptively reduce stress to allow aggressive LDMOS scaling without increasing the risk of failure.
A gate driver approach is presented for the reduction of turn-on losses in hard switching applications. A significant turn-on loss reduction of up to 55% has been observed for SiCMOSFETs. The gate driver approach uses a transformer which couples energy from the power path back into the gate path during switching events, providing increased gate driver current and thereby faster switching speed.
The gate driver approach was tested on a boost converter running at a switching frequency up to 300 kHz. With an input voltage of 300V and an output voltage of 600V, it was possible to reduce the converter losses by 8% at full load. Moreover, the output power range could be extended by 23% (from 2.75kW to 3.4 kW) due to the reduction of the turn-on losses.
Electric freight vehicles have the potential to mitigate local urban road freight transport emissions, but their numbers are still insignificant. Logistics companies often consider electric vehicles as too costly compared to vehicles powered by combustion engines. Research within the body of the current literature suggests that increasing the driven mileage can enhance the competitiveness of electric freight vehicles. In this paper we develop a numeric simulation approach to analyze the cost-optimal balance between a high utilization of medium-duty electric vehicles – which often have low operational costs – and the common requirement that their batteries will need expensive replacements. Our work relies on empirical findings of the real-world energy consumption from a large German field test with medium-duty electric vehicles. Our results suggest that increasing the range to the technical maximum by intermediate (quick) charging and multi-shift usage is not the most cost-efficient strategy in every case. A low daily mileage is more cost-efficient at high energy prices or consumptions, relative to diesel prices or consumptions, or if the battery is not safeguarded by a long warranty. In practical applications our model may help companies to choose the most suitable electric vehicle for the application purpose or the optimal trip length from a given set of options. For policymakers, our analysis provides insights on the relevant parameters that may either reduce the cost gap at lower daily mileages, or increase the utilization of medium-duty electric vehicles, in order to abate the negative impact of urban road freight transport on the environment.
Understanding the factors that influence the accuracy of visual SLAM algorithms is very important for the future development of these algorithms. So far very few studies have done this. In this paper, a simulation model is presented and used to investigate the effect of the number of scene points tracked, the effect of the baseline length in triangulation and the influence of image point location uncertainty. It is shown that the latter is very critical, while the other all play important roles. Experiments with a well known semi-dense visual SLAM approach are also presented, when used in a monocular visual odometry mode. The experiments show that not including sensor bias and scale factor uncertainty is very detrimental to the accuracy of the simulation results.
In this work we investigate the behavior of MIS- and Schottky-gate AlGaN/GaN HEMTs under high-power pulsestress. A special setup capable of applying pulses of constant power is used to evaluate the electro-thermal response in different operating points. For both types of devices, the time to failure was found to decrease with increasing drain-source voltage. Overall, the Schottky-gate device displays a higher pulse robustness. The pulse withstand time of the MIS-gate device is limited by the occurrence of a thermal instability at approximately 240°C while the Schottky-gate device displays a rapid increase of the gate leakage current prior to failure. The mechanism responsible for this gate current is further investigated by static and transient temperature measurements and yielded activation energies of 0.6 eV and 0.84 eV.
Ein wesentliches Ziel der unter dem Schlagwort Industrie 4.0 gebündelten neuen Entwicklungen ist die Vernetzung intelligenter Komponenten in industriellen Anlagen, um Prozesse transparenter und effizienter zu gestalten. Ein weiteres Ziel ist das Condition Monitoring, d.h. die Überwachung des Zustands der Komponenten während der Laufzeit und die Abschätzung der Restlebensdauer, damit die gesamte Lebensdauer der Komponente ausgenutzt und Wartungsintervalle besser geplant werden können. Die Bewertung des Komponentenzustands erfolgt anhand von Messgrößen, die entweder durch zusätzlich in den Prozess eingebrachte Sensoren erfasst werden oder durch Prozessdaten, die in den Regel- und Steuereinrichtungen verfügbar sind. Diese Messdaten werden ausgewertet und das Ergebnis wird dem Anwender angezeigt.
Der vorliegende Beitrag gibt einen kurzen Überblick über verwendete Messgrößen sowie verwendete Auswerteverfahren. Darüber hinaus wird ein Verfahren erläutert, das die Schwierigkeiten bei der Beurteilung der üblicherweise verwendeten Frequenzspektren vermeidet.