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A proposal for early warning indicators to detect impending metallization failure of DMOS transistors in cyclic operation

  • DMOS transistors in integrated smart power technologies are often subject to cyclic power dissipation with substantial selfheating. This leads to repetitive thermo mechanical stress, causing fatigue of the on-chip metallization and limiting the lifetime. Hence, most designs use large devices for lower peak temperatures and thus reduced stress to avoid premature failures. However, significantly smaller DMOS transistors are acceptable if the system reverts to a safer operating condition with lower stress when a failure is expected to occur in the near future. Hence, suitable early-warning sensors are required. This paper proposes a floating metal meander embedded between DMOS source and drain to detect an impending metallization failure. Measurement results of several variants will be presented and discussed, investigating their suitability as early warning indicators.

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Author of HS ReutlingenRitter, Matthias; Pfost, Martin
Erschienen in:ICMTS 2015 : proceedings of the 2015 IEEE International Conference on Microelectronic Test Structures : March 23-26, 2015, Tempe, Arizona
Place of publication:Piscataway, NJ
Document Type:Conference proceeding
Publication year:2015
Page Number:5
First Page:18
Last Page:22
DDC classes:537 Elektrizität, Elektronik
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt