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Energy capability of SiC MOSFETs

  • The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future power semiconductor devices. A lower boundary of the die size can be obtained from the thermal impedance required to withstand the high power dissipation during a short-circuit event. However, this implies that the power distribution is homogeneous and that no current filamentation has to be considered. Therefore, this work investigates this assumption by evaluating the stability of a SiC-MOSFET over a wide range of operation conditions by measurements up to destruction, thermal simulations, and high-temperature characterization.

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Author of HS ReutlingenUnger, Christian; Pfost, Martin
Erschienen in:Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ; June 12 - 16, Žofín Palace, Prague, Czech Republic
Place of publication:Piscataway, NJ
Document Type:Conference proceeding
Publication year:2016
Page Number:4
First Page:275
Last Page:278
DDC classes:621 Angewandte Physik
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt