Energy capability of SiC MOSFETs
- The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future power semiconductor devices. A lower boundary of the die size can be obtained from the thermal impedance required to withstand the high power dissipation during a short-circuit event. However, this implies that the power distribution is homogeneous and that no current filamentation has to be considered. Therefore, this work investigates this assumption by evaluating the stability of a SiC-MOSFET over a wide range of operation conditions by measurements up to destruction, thermal simulations, and high-temperature characterization.
| Author of HS Reutlingen | Unger, Christian; Pfost, Martin |
|---|---|
| DOI: | https://doi.org/10.1109/ISPSD.2016.7520831 |
| ISBN: | 978-1-4673-8770-5 |
| Erschienen in: | Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ; June 12 - 16, Žofín Palace, Prague, Czech Republic |
| Publisher: | IEEE |
| Place of publication: | Piscataway, NJ |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2016 |
| Page Number: | 4 |
| First Page: | 275 |
| Last Page: | 278 |
| DDC classes: | 621 Angewandte Physik |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
