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A 1.3A gate driver for GaN with fully integrated gate charge buffer capacitor delivering 11nC enabled by high-voltage energy storing

  • More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ~10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ~15V for Si.

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Author of HS ReutlingenSeidel, Achim; Wicht, Bernhard
Erschienen in:2017 IEEE International Solid-State Circuits Conference : digest of technical papers
Place of publication:Piscataway, NJ
Editor:Laura Chizuko Fujino
Document Type:Conference proceeding
Publication year:2017
Page Number:3
First Page:432
Last Page:434
DDC classes:620 Ingenieurwissenschaften und Maschinenbau
Open access?:Nein
Licence (German):License Logo  In Copyright - Urheberrechtlich geschützt