621 Angewandte Physik
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This work presents a spiral antenna array, which can be used in the V- and W-Band. An array equipped with Dolph-Chebychev coefficients is investigated to address issues related to the low gain and side lobe level of the radiating structure. The challenges encountered in this achievement are to provide an antenna that is not only good matched but also presents an appreciable effective bandwidth at the frequency bands of interest. Its radiation properties including the effective bandwidth and the gain are analyzed for the W-Band.
Induced by a societal decision to phase out conventional energy production - the so-called Energiewende (energy transition) - the rise of distributed generation acts as a game changer within the German energy market. The share of electricity produced from renewable resources increased to 31,6% in 2015 (UBA, 2016) with a targeted share of renewable resources in the electricity mix of 55%-60% in 2035 (RAP, 2015), opening perspectives for new products and services. Moreover, the rapidly increasing degree of digitization enables innovative and disruptive business models in niches at the grid's edge that might be the winners of the future. It also stimulates the market entry of newcomers and competitors from other sectors, such as IT or telecommunication, challenging the incumbent utilities. For example, virtual and decentral market places for energy are emerging; a trend that is likely to speed up considerably by blockchain technology, if the regulatory environment is adjusted accordingly. Consequently, the energy business is turned upside down, with customers now being at the wheel. For instance, more than one-third of the renewable production capacities are owned by private persons (Trendsearch, 2013). Therefore, the objective of this chapter is to examine private energy consumer and prosumer segments and their needs to derive business models for the various decentralized energy technologies and services. Subsequently, success factors for dealing with the changing market environment and consequences of the potentially disruptive developments for the market structure are evaluated.
Condition Monitoring for mechanical systems like bearings or transmissions is often done by analysing frequency spectra obtained from accelerometers mounted to the components under observation. Although this approach gives a high amount on information about the system behaviour, the interpretation of the resulting spectra requires expert knowledge, that is, a deep understanding of the effect on condition deterioration on the measured spectra. However, an increasing number of condition monitoring applications demands other representations of the measured signals that can be easily interpreted even by non–experts. Therefore, the objective of this paper is to develop an approach for processing measured process data in order to obtain an easy to interpret measure for assessing the component condition. The main idea is to evaluate the deterioration of a component condition by computing the correlation function of current measurements with past measurements in order to detect a component condition deterioration from a change in these correlation functions. Besides the simplicity of the obtained measure, this approach opens the opportunity for integrating a model based approach as well. The developed method is tested based on a condition monitoring application in a roller chain.
Virtual prototyping of integrated mixed-signal smart sensor systems requires high-performance co-simulation of analog frontend circuitry with complex digital controller hardware and embedded real-time software. We use SystemC/TLM 2.0 in conjunction with a cycle-count accurate temporal decoupling approach (TD) to simulate digital components and firmware code execution at high speed while preserving clock-cycle accuracy and, thus, real-time behavior at time quantum boundaries. Optimal time quanta ensuring real-time capability can be calculated and set automatically during simulation if the simulation engine has access to exact timing information about upcoming inter-process communication events. These methods fail in the case of non-deterministic, asynchronous events, resulting in potentially invalid simulation results. In this paper, we propose an extension to the case of asynchronous events generated by blackbox sources from which a priori event timing information is not available, such as coupled analog simulators or hardware in the loop. Additional event processing latency or rollback effort caused by temporal decoupling is minimized by calculating optimal time quanta dynamically in a SystemC model using a linear prediction scheme. We analyze the theoretical performance of the presented predictive temporal decoupling approach (PTD) by deriving a cost model that expresses the expected simulation effort in terms of key parameters such as time quantum size and CPU time per simulation cycle. For an exemplary smart-sensor system model, we show that quasi-periodic events that trigger activities in TD processes are handled accurately after the predictor has settled.
This paper addresses the turn-on switching process of insulated-gate bipolar transistor (IGBT) modules with anti-parallel free-wheeling diodes (FWD) used in inductive load switching power applications. An increase in efficiency, i.e. decrease in switching losses, calls for a fast switching process of the IGBT, but this commonly implies high values of the reverse-recovery current overshoot. To overcome this undesired behaviour, a solution was proposed which achieves an independent control of the collector current slope and peak reverse recovery current by applying a gate current that is briefly turned negative during the turn-on process. The feasibility of this approach has already been shown, however, a sophisticated control method is required for applying it in applications with varying currents, temperature and device parameters. In this paper a solution based on an adaptive, iterative closed-loop ontrol is proposed. Its effectiveness is demonstrated by experimental results from a 1200 V/200A IGBT power module for different load currents and reverse-recovery current overshoots.
The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future power semiconductor devices. A lower boundary of the die size can be obtained from the thermal impedance required to withstand the high power dissipation during a short-circuit event. However, this implies that the power distribution is homogeneous and that no current filamentation has to be considered. Therefore, this work investigates this assumption by evaluating the stability of a SiC-MOSFET over a wide range of operation conditions by measurements up to destruction, thermal simulations, and high-temperature characterization.
An ultra-low power capacitance extrema and ratio detector for electrostatic energy harvesters
(2015)
The power supply is one of the major challenges for applications like internet of things IoTs and smart home. The maintenance issue of batteries and the limited power level of energy harvesting is addressed by the integrated micro power supply presented in this paper. Connected to the 120/230 Vrms mains, which is one of the most reliable energy sources and anywhere indoor available, it provides a 3.3V DC output voltage. The micro power supply consists of a fully integrated ACDC and DCDC converter with one external low voltage SMD buffer capacitor. The micro power supply is fabricated in a low cost 0.35 μm 700 V CMOS technology and covers a die size of 7.7 mm2. The use of only one external low voltage SMD capacitor, results in an extremely compact form factor. The ACDC is a direct coupled, full wave rectifier with a subsequent bipolar shunt regulator, which provides an output voltage around 17 V. The DCDC stage is a fully integrated 4:1 SC DCDC converter with an input voltage as high as 17 V and a peak efficiency of 45 %. The power supply achieves an overall output power of 3 mW, resulting in a power density of 390 μW/mm2. This exceeds prior art by a factor of 11.
Die Nachfrage nach kompakten Spannungsversorgungen ist in den letzten Jahren stark gestiegen. Vor allem im Bereich der mobilen Geräte wachsen die Anforderung an die Spannungsversorgung hinsichtlich Bauvolumen und Batterielaufzeit. Für die Vollintegration von DC-DC- Wandlern als „Power Supply on Chip“ ist der SC-Wandler (Switched-Capacitor-Wandler) besonders geeignet. Insbesondere für Low-Power-Anwendungen im Bereich 10 mW kann ein SC-Wandler sehr gut, ohne externe Bauelemente, integriert werden. Während es für niedrige Eingangsspannungen (bis zu 5 V) eine Vielzahl an Topologien und Konzepten gibt, wurden SC-Wandler für höhere Eingangsspannungen (> 8 V) bisher nur wenig untersucht. Dieser Beitrag untersucht die wichtigsten Grundlagen für SC-Wandler mit Schwerpunkt auf hoher und zugleich variabler Eingangsspannung im Bereich 5 - 20 V. Am Beispiel eines Multi-Ratio-Wandlers (Wandler mit mehreren Übersetzungsverhältnissen), dem rekursiven SC-Wandler (RSC- Wandler), werden die Anforderungen eines SC- Wandler für hohe Eingangsspannungen herausgearbeitet und diskutiert.
In dieser Arbeit wird eine optimierte Bandgap-Referenz zur Erzeugung einer temperaturstabilen Spannung und eines Referenzstroms vorgestellt. Für Low-Power-Anwendungen wurde die Bandgap-Referenz, basierend auf der Brokaw-Zelle, mit minimaler Stromaufnahme und optimierter Chipfläche durch Multi-Emitter-Layout der Bipolartransistoren implementiert. Zusätzliches Merkmal ist ein verbreiteter Versorgungsspannungsbereich von 2,5 bis 5,5 V. Simulationen zeigen, dass eine stabile Ausgangsspannung von 1,218 V und ein Referenzstrom von 1,997 μA realisiert wird. Im Temperaturbereich -40 °C … 50 °C sowie dem gesamten Bereich der Versorgungsspannung beträgt die Genauigkeit der Referenzspannung ± 0,04 % mit einer Gesamtstromaufnahme zwischen 3,5 und 10 μA. Es wird eine Temperaturdrift von 2,18 ppm/K erreicht. Durch das elektronische Trimmen von Widerständen wird der Offset der Ausgangsspannung, bedingt durch Herstellungstoleranzen, auf ±3,5 mV justiert. Die Referenz wird in einer 0,18 μm BiCMOS-Technologie implementiert.
Im Bereich integrierter Schaltungen (ICs) für die Fahrzeugelektronik ist in den letzten Jahren ein Trend zum Einsatz komplexer Mixed-Signal-Komponenten erkennbar. Dies führt dazu, dass ein altes Problem zunehmend in den Fokus der EDA-Entwickler rückt: Während der digitale Entwurfsfluss hoch automatisiert ist, findet der Entwurf analoger Komponenten überwiegend in einem manuellen, zeitaufwändigen und interaktiven Entwurfsstil statt. Die folgende Arbeit beschreibt ein Konzept, diesen Mangel mit Hilfe eines durchgängigen analogen Entwurfsflusses unter Verwendung so genannter Modul-Generatoren zu mildern. Der vorgestellte Ansatz zur Erzeugung von Schaltkreis-Automatismen berücksichtigt die implizite Nutzung von Erfahrungswissen des Designers, bietet eine volle Topologie-Flexibilität und steigert die Wiederverwendung („re-use“) gängiger Schaltungstopologien. Die erreichten Zwischenergebnisse lassen einen erheblichen Nutzen erkennen und zeigen das Potenzial sogenannter „Parametrisierter Schaltkreise“ auf, den Automatisierungsgrad des analogen Schaltungsentwurfs zu steigern.