Analytical estimation of parasitic ringing overvoltage in fast switching half-bridges
- Modern wide bandgap power devices promise higher power conversion performance if the device can be operated reliably. As switching speed increases, the effects of parasitic ringing become more prominent, causing potentially damaging overvoltages during device turn-off. Estimating the expected additional voltage caused by such ringing enables more reliable designs. In this paper, we present an analytical expression to calculate the expected overvoltage caused by parasitic ringing based on parasitic element values and operating point parameters. Simulations and measurements confirm that the expression can be used to find the smallest rise time of the switches’ drain-source voltage for minimum overvoltage. The given expression also allows the prediction of the trade off overvoltage amplitude in case of faster required rise times.
| Author of HS Reutlingen | Czerwenka, Philipp; Maier, Jannik; Wolfer, Tobias; Schullerus, Gernot; Hennig, Eckhard |
|---|---|
| DOI: | https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264309 |
| ISBN: | 978-9-0758-1541-2 |
| Erschienen in: | 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), 4-8 September 2023, Aalborg, proceedings |
| Publisher: | IEEE |
| Place of publication: | Piscataway, NJ |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2023 |
| Tag: | breakdown; estimation technique; half bridge; parasitic elements; wide bandgap devices |
| Page Number: | 7 |
| First Page: | 1 |
| Last Page: | 7 |
| DDC classes: | 600 Technik |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
