Capacitive gate drive signal transmission with transient immunity up to 300 V/ns
- The increasing slew rate of modern power switches can increase the efficiency and reduce the size of power electronic applications. This requires a fast and robust signal transmission to the gate driver of the high-side switch. This work proposes a galvanically isolated capacitive signal transmission circuit to increase common mode transient immunity (CMTI). An additional signal path is introduced to significantly improve the transmission robustness for small duty cycles to assure a safe turn-off of the power switch. To limit the input voltage range at the comparator on the secondary side during fast high-side transitions, a clamping structure is implemented. A comparison between a conventional and the proposed signal transmission is performed using transistor level simulations. A propagation delay of about 2 ns over a wide range of voltage transients of up to 300V/ns at input voltages up to 600V is achieved.
| Author of HS Reutlingen | Hackel, Jonathan; Seidel, Achim; Wittmann, Jürgen; Wicht, Bernhard |
|---|---|
| URL: | http://ieeexplore.ieee.org/document/7584292/ |
| Erschienen in: | Analog 2016 : Beiträge der 15. ITG/GMM-Fachtagung, 12. - 14. September 2016 in Bremen |
| Publisher: | VDE Verlag |
| Place of publication: | Berlin |
| Editor: | Christoph Grimm |
| Document Type: | Conference proceeding |
| Language: | English |
| Publication year: | 2016 |
| Page Number: | 5 |
| First Page: | 53 |
| Last Page: | 57 |
| DDC classes: | 620 Ingenieurwissenschaften und Maschinenbau |
| Open access?: | Nein |
| Licence (German): |  In Copyright - Urheberrechtlich geschützt |
