Refine
Year of publication
- 2017 (209) (remove)
Document Type
- Conference proceeding (103)
- Journal article (77)
- Book chapter (17)
- Book (6)
- Working Paper (3)
- Doctoral Thesis (1)
- Issue of a journal (1)
- Review (1)
Has full text
- yes (209) (remove)
Is part of the Bibliography
- yes (209)
Institute
- Informatik (73)
- ESB Business School (54)
- Technik (38)
- Texoversum (24)
- Life Sciences (19)
Publisher
- Springer (45)
- IEEE (27)
- Hochschule Reutlingen (21)
- Elsevier (16)
- Gesellschaft für Informatik e.V (15)
- Association for Computing Machinery (8)
- Association for Information Systems (5)
- Wiley (5)
- Università Politecnica delle Marche (4)
- American Marketing Association (3)
A gate driver approach is presented for the reduction of turn-on losses in hard switching applications. A significant turn-on loss reduction of up to 55% has been observed for SiCMOSFETs. The gate driver approach uses a transformer which couples energy from the power path back into the gate path during switching events, providing increased gate driver current and thereby faster switching speed.
The gate driver approach was tested on a boost converter running at a switching frequency up to 300 kHz. With an input voltage of 300V and an output voltage of 600V, it was possible to reduce the converter losses by 8% at full load. Moreover, the output power range could be extended by 23% (from 2.75kW to 3.4 kW) due to the reduction of the turn-on losses.
The best fully automated analysis process achieves even better classification results than the established manual process. The best algorithms for the three analysis steps are (i) SGLTR (Savitzky-Golay Laplace operator filter thresholding regions) and LM (Local Maxima) for automated peak identification, (ii) EM clustering (Expectation Maximization) and DBSCAN (Density-Based Spatial Clustering of Applications with Noise) for the clustering step and (iii) RF (Random Forest) for multivariate classification. Thus, automated methods can replace the manual steps in the analysis process to enable an unbiased high throughput use of the technology.
How to protect the skin from getting sun burnt? The sun can damage your skin e.g. skin cancer. But the sun has a positive effect to the human. The time in sun and the intensity are key values between enjoy the sunbath and having a negative effect to the skin. A smart device like a UV flower could help you to enjoy the sunbath. It measures the UV index around you and gives this information to a smartphone app. The development steps of such a device are described in this paper. The UV flower is made of textile fabrics.
A 3D face modelling approach for pose-invariant face recognition in a human-robot environment
(2017)
Face analysis techniques have become a crucial component of human-machine interaction in the fields of assistive and humanoid robotics. However, the variations in head-pose that arise naturally in these environments are still a great challenge. In this paper, we present a real-time capable 3D face modelling framework for 2D in-the-wild images that is applicable for robotics. The fitting of the 3D Morphable Model is based exclusively on automatically detected landmarks. After fitting, the face can be corrected in pose and transformed back to a frontal 2D representation that is more suitable for face recognition. We conduct face recognition experiments with non-frontal images from the MUCT database and uncontrolled, in the wild images from the PaSC database, the most challenging face recognition database to date, showing an improved performance. Finally, we present our SCITOS G5 robot system, which incorporates our framework as a means of image pre-processing for face analysis.
The presented wide-Vin step-down converter introduces a parallel-resonant converter (PRC), comprising an integrated 5-bit capacitor array and a 300 nH resonant coil, placed in parallel to a conventional buck converter. Unlike conventional resonant concepts, the implemented soft-switching control eliminates input voltage dependent losses over a wide operating range. This ensures high efficiency across a wide range of Vin= 12-48V, 100-500mA load and 5V output at up to 15MHz switching frequency. The peak efficiency of the converter is 76.3 %. Thanks to the low output current ripple, the output capacitor can be as small as 50 nF, while the inductor tolerates a larger ESR, resulting in small component size. The proposed PRC architecture is also suitable for future power electronics applications using fast-switching GaN devices.
More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ~10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ~15V for Si.
Software and system development is complex and diverse, and a multitude of development approaches is used and combined with each other to address the manifold challenges companies face today. To study the current state of the practice and to build a sound understanding about the utility of different development approaches and their application to modern software system development, in 2016, we launched the HELENA initiative. This paper introduces the 2nd HELENA workshop and provides an overview of the current project state. In the workshop, six teams present initial findings from their regions, impulse talk are given, and further steps of the HELENA roadmap are discussed.
Modern power transistors are able to switch at very high transition speed, which can cause EMC violations and overshoot. This is addressed by a gate driver with variable gate current, which is able to control the transition speed. The key idea is that the gate driver can influence the di/dt and dv/dt transition separately and optimize whichever transition promises the highest improvement while keeping switching losses low. To account for changes in the load current, supply voltage, etc., a control loop is required in the driver to ensure optimized switching. In this paper, an efficient control scheme for an automotive gate driver with variable output current capability is presented. The effectiveness of the control loop is demonstrated for a MOSFET bridge consisting of OptiMOS-T2™devices with a total gate charge of 39nC. This bridge setup shows dv/dt transitions between 50 to 1000ns, depending on driving current. The driver is able to switch between gate current levels of 1 to 500mA in 10/15ns (rising/falling transition). With the implemented control loop the driver is measured to significantly reduce the ringing and thereby reduce device stress and electromagnetic emissions while keeping switching losses 52% lower than with a constant current driver.
Real estate markets are known to fluctuate. The real estate market in Stuttgart, Germany, has been booming for more than a decade: square-meter price hit top levels and real estate agents claim that market prices will continue to increase. In this paper, we test this market understanding by developing and analyzing a system dynamics model that depicts the Stuttgart real estate market. Simulating the model explains oscillating behavior arising from significant time delays and endogenous feedback structures – and not necessarily oscillating interest rates, as market experts assume. Scenarios provide insights into the system's behavior reacting to changes exogenous to the model. The first scenario tests the market development under increasing interest rates. The other scenario deals with possible effects on the real estate market if the regional automotive economy suffers from intense competition with new market players entering with alternative fuel vehicles and new technologies. With a policy run we test market structure changes to eliminate cyclical effects. The paper confirms that the business cycle in the Stuttgart real estate market arises from within the system's underlying structure, thus emphasizing the importance of understanding feedback structures.