621 Angewandte Physik
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The paper illustrates the status quo of a research project for the development of a control system enabling CHP units for a demand-oriented electricity production by an intelligent management of the heat storage tank. Thereby the focus of the project is twofold. One is the compensation of the fluctuating power production by the renewable energies solar and wind. Secondly, a reduction of the load on the power grid is intended by better matching local electricity demand and production.
In detail, the general control strategy is outlined, the method utilized for forecasting heat and electricity demand is illustrated as well as a correlation method for the temperature distribution in the heat storage tank based on a Sigmoid function is proposed. Moreover, the simulation model for verification and optimization of the control system and the two field test sites for implementing and testing the system are introduced.
Der elektrische Wirkungsgrad stellt eines der wichtigsten Bewertungskriterien für BHKW dar, da über diese Größe ausgedrückt wird, wie viel des Wertproduktes „elektrische Energie“ bezogen auf die eingesetzte oder aufzuwendende Brennstoffenergie produziert werden kann. Ein hoher elektrischer Wirkungsgrad ist somit gleichbedeutend mit hohen Erlösen aus dem Verkauf der erzeugten elektrischen Energie und damit eine grundlegende Voraussetzung für einen wirtschaftlichen Betrieb eines BHKWs. Folglich sind die Hersteller von BHKW bestrebt, den elektrischen Wirkungsgrad ihrer Geräte kontinuierlich zu verbessern und nach oben zu treiben. Dieses Bemühen zeigt sich eindrucksvoll an der Entwicklung der mechanischen Effizienz von Gasmotoren der Firma GE Jenbacher. Während mit Motoren der Baureihe 6 im Leistungsbereich 1,8 – 4,4 MWel im Jahr 1988 eine mechanische Effizienz von 34% erreichbar war, liegt dieser Wert mittlerweile bei etwa 47,5%. Diese enorme Steigerung konnte im Wesentlichen durch eine Erhöhung des mittleren effektiven Zylinderarbeitsdrucks von etwa 10 bar im Jahr 1988 auf derzeit 24 bar erzielt werden. Dabei hilft der Magerbetrieb, der gleichzeitig ein Zurückdrängen der NOx-Emissionen bewirkt, die Klopfgrenze zu höheren Drücken hin zu verschieben. Eine sichere Zündung des Gas-Luft-Gemisches wird durch die Vorkammerzündung erreicht.
This work presents a spiral antenna array, which can be used in the V- and W-Band. An array equipped with Dolph-Chebychev coefficients is investigated to address issues related to the low gain and side lobe level of the radiating structure. The challenges encountered in this achievement are to provide an antenna that is not only good matched but also presents an appreciable effective bandwidth at the frequency bands of interest. Its radiation properties including the effective bandwidth and the gain are analyzed for the W-Band.
This paper presents the design and simulation processes of an Equiangular Spiral Antenna for the extremely high frequencies between 65 GHz and 170 GHz. A new approach for the analysis of the antenna’s electrical parameters is described. This approach is based on formalism proposed by Rumsey to determine the EM field produced by an equiangular spiral antenna. Analytical expressions of the electrical parameters such as the gain or the directivity are then calculated using well sustained mathematical approximations. The comparison of obtained results with those from numerical integration methods shows a good agreement.
In this paper, research projects with 30 meter balanced cabling and data rates up to 25 Gbps over one single pair are described. The project aim is to achieve 100 Gbps via a four pair balanced cabling channel. In the following, spectral characteristics of the used prototype twisted pair are presented. Therefore, the insertion loss of the single cable in comparison to the insertion loss of the cable in combination with an equalizing amplifier, as well as the group delay of the cable and the cable connected to the equalizing amplifier is shown. Furthermore, a carrierless Pulse Amplitude Modulation with 32 different levels (PAM-32) as an approach for a possible line encoding is presented. Finally, research measurements of the data transmission with a data rate up to 25 Gbps via shielded twisted pair is shown.
Es wird ein hochintegrierter Gatetreiber für 600V-Anwendungen mit einer galvanischen Isolation zwischen der Ansteuerelektronik und der Treiberseite vorgestellt. Eine Besonderheit ist die bidirektionale Signalübertragung und die Energieversorgung über einen einzigen Transformator. Die Treiberansteuersignale werden mittels 10/20 MHz Frequenzmodulation übertragen. Die Signalrückübertragung ist in Form einer 1Mbit/s Amplitudenmodulation realisiert. Die Energieübertragung über den Transformator erlaubt ein dauerhaftes Einschalten des Treibers. Der Energiebedarf während des Schaltvorgangs wird hauptsächlich durch eine Bootstrapschaltung bereitgestellt. Eine weitere Besonderheit ist die Verwendung einer flächeneffizienten Integration einer NMOS Treiberausgangsstufe. Der Gatetreiber wurde in einer 180nm Hochvolt-BiCMOS-Technologie hergestellt. Messungen bestätigen die Funktion des Treibers.
Bootstrap circuits are mainly used for supplying a gate driver circuit to provide the gate overdrive voltage for a high-side NMOS transistor. The required charge has to be provided by a bootstrap capacitor which is often too large for integration if an acceptable voltage dip at the capacitor has to be guaranteed. Three options of an area efficient bootstrap circuit for a high side driver with an output stage of two NMOS transistors are proposed. The key idea is that the main bootstrap capacitor is supported by a second bootstrap capacitor, which is charged to a higher voltage and connected when the gate driver turns on. A high voltage swing at the second capacitor leads to a high charge allocation. Both bootstrap capacitors require up to 70% less area compared to a conventional bootstrap circuit. This enables compact power management systems with fewer discrete components and smaller die size. A calculation guideline for optimum bootstrap capacitor sizing is given. The circuit was manufactured in a 180nm high-voltage BiCMOS technology as part of a high-voltage gate driver. Measurements confirm the benefit of high-voltage charge storing. The fully integrated bootstrap circuit including two stacked 75.8pF and 18.9pF capacitors results in a voltage dip lower than 1V. This matches well with the theory of the calculation guideline.
Galvanic isolated gate drivers require a control signal as well as energy transmission from the control side (lowside) to the driver side (high-side). An additional backward signal transmission is preferred for error signals, status information, etc. This is often realized by means of several transformers or opto-couplers. Decreasing the number of isolation elements results in lower cost and a higher degree of miniaturization. This work presents a gate driver with bidirectional signal transmission and energy transfer via one single transformer. The key concept proposed in this paper is to combine bootstrapping to deliver the main gate charge for the driven power switch with additional energy transfer via the signal transformer. This paper also presents a very efficient combination of energy transfer to two high-side supply rails with back channel amplitude modulation. This way an isolated gate driver can be implemented that allows 100% pulse-width modulation (PWM) duty cycle at low complexity and system cost. The proposed high-side driver IC with integrated power supply, modulation and demodulation circuits was manufactured in a 180nm high-voltage BiCMOS technology. Measurements confirm the concept of bidirectional signal transmission with a 1MBit/s amplitude modulation, 10/20MHz frequency modulation and a maximum power transmission of 14mW via the transformer.
There is a growing need for motor drives with improved EMC in various automotive and industrial applications. An often referenced approach to reduce EME is to change the shape of the switching signal to reduce the EMI caused by the voltage and current transitions. This requires very precise gate control of the power MOSFET to achive better switching behaviour and lower EME without a major increase in switching losses. In order to find an optimal trade-off, this work utilizes a monolithic current mode gate driver with a variable output current that can be changed within 10ns. With this driver, measurements with different gate current profiles were taken. The di/dt transition was confirmed to be as important as the dv/dt transition in the power MOSFET. As a result of the improved switching behavior the emissions were reduced by up to 20dB between 7MHz and 60MHz with a switching loss that is 52% lower than with a constantly low gate current.
An ultra-low power capacitance extrema and ratio detector for electrostatic energy harvesters
(2015)
The power supply is one of the major challenges for applications like internet of things IoTs and smart home. The maintenance issue of batteries and the limited power level of energy harvesting is addressed by the integrated micro power supply presented in this paper. Connected to the 120/230 Vrms mains, which is one of the most reliable energy sources and anywhere indoor available, it provides a 3.3V DC output voltage. The micro power supply consists of a fully integrated ACDC and DCDC converter with one external low voltage SMD buffer capacitor. The micro power supply is fabricated in a low cost 0.35 μm 700 V CMOS technology and covers a die size of 7.7 mm2. The use of only one external low voltage SMD capacitor, results in an extremely compact form factor. The ACDC is a direct coupled, full wave rectifier with a subsequent bipolar shunt regulator, which provides an output voltage around 17 V. The DCDC stage is a fully integrated 4:1 SC DCDC converter with an input voltage as high as 17 V and a peak efficiency of 45 %. The power supply achieves an overall output power of 3 mW, resulting in a power density of 390 μW/mm2. This exceeds prior art by a factor of 11.